Presentation 2004/8/20
40Gbps Waveguide Photodiode for flip-chip assembly
Masaharu Nakaji, Eitaro Ishimura, Yoshihiko Hanamaki, Toshitaka Aoyagi, Takashi Nishimura,
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Abstract(in English) We have developed 40Gbps waveguide-photodiode for flip-chip bonding. The high sensitivity over 0.8A/W has been realized by the asymmetric waveguide structure for 1.3μm and 1.55μm wavelength and high bandwidth over 45GHz has been obtained by Fe doped InP burying layer. PD-preamp modules fabricated flip-chip bonding technique, which can reduce the inductance of the bonding wire, have obtained the receiver sensitivity of -6.4dBm at 1.31μm and -6.1dBm at 1.55μm based on ITU-T G693
Keyword(in Japanese) (See Japanese page)
Keyword(in English) asymmetric waveguide / flip-chip bonding / 40Gbps / waveguide-photodiode
Paper # EMD2004-46,CPM2004-72,OPE2004-129,LQE2004-44
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Conference Information
Committee LQE
Conference Date 2004/8/20(1days)
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Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) 40Gbps Waveguide Photodiode for flip-chip assembly
Sub Title (in English)
Keyword(1) asymmetric waveguide
Keyword(2) flip-chip bonding
Keyword(3) 40Gbps
Keyword(4) waveguide-photodiode
1st Author's Name Masaharu Nakaji
1st Author's Affiliation Mitsubishi electric corp. Optoelectronics device development dept.()
2nd Author's Name Eitaro Ishimura
2nd Author's Affiliation Mitsubishi electric corp. Optoelectronics device development dept.
3rd Author's Name Yoshihiko Hanamaki
3rd Author's Affiliation Mitsubishi electric corp. Optoelectronics device dpt.
4th Author's Name Toshitaka Aoyagi
4th Author's Affiliation Mitsubishi electric corp. Optoelectronics device development dept.
5th Author's Name Takashi Nishimura
5th Author's Affiliation Mitsubishi electric corp. Optoelectronics device development dept.
Date 2004/8/20
Paper # EMD2004-46,CPM2004-72,OPE2004-129,LQE2004-44
Volume (vol) vol.104
Number (no) 270
Page pp.pp.-
#Pages 5
Date of Issue