| Presentation | 2003/12/13 GaIn(N)As/GaAs Long Wavelength Surface Emitting Lasers Tomoyuki MIYAMOTO, Fumio KOYAMA, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | GaIn(N)As/GaAs long wavelength surface emitting lasers are expected as high performance and low cost light sources for optical data transmission systems. The highly strained GaInAs QW VCSELs are demonstrated at 1.1-1.2μm. A single mode power of 2mW and 140℃ operation is observed, and 2.5Gbps/10km transmission is confirmed. The MOCVD growth of the 1.3μm GaInNAs QW is established, and the threshold and temperature characteristics are the record level of 340A/cm^2 and 210K, respectively. The GaInNAs VCSELs by CBE shows a 1.2mA threshold and a single mode of 0.34mW for a 7×7μm^2 large aperture. A high-N GaInNAs QWs and Sb based quantum dots are also investigated towards long wavelength on the GaAs. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | VCSEL / highly strained GaInAs / GaInNAs / QW / QD / optical communication / epitaxy |
| Paper # | OPE2003-226,LQE2003-163 |
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| Conference Information | |
| Committee | LQE |
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| Conference Date | 2003/12/13(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
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| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | GaIn(N)As/GaAs Long Wavelength Surface Emitting Lasers |
| Sub Title (in English) | |
| Keyword(1) | VCSEL |
| Keyword(2) | highly strained GaInAs |
| Keyword(3) | GaInNAs |
| Keyword(4) | QW |
| Keyword(5) | QD |
| Keyword(6) | optical communication |
| Keyword(7) | epitaxy |
| 1st Author's Name | Tomoyuki MIYAMOTO |
| 1st Author's Affiliation | P&I Lab., Tokyo Institute of Technology() |
| 2nd Author's Name | Fumio KOYAMA |
| 2nd Author's Affiliation | P&I Lab., Tokyo Institute of Technology |
| Date | 2003/12/13 |
| Paper # | OPE2003-226,LQE2003-163 |
| Volume (vol) | vol.103 |
| Number (no) | 528 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |