| Presentation | 2003/12/13 GaN-based intersubband transitions for ultrafast optical switching Norio Iizuka, Kei Kaneko, Nobuo Suzuki, |
|---|---|
| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Intersubband transitions (ISBTs) in nitride semiconductor quantum wells are a promising technology for realizing all-optical switching devices due to their ultrafast optical response. The ISBTs were achieved at optical communication wavelengths in GaN/AlN quantum wells, and it was shown that the ISBT wavelength is affected by a large built-in filed in the wells. The verification of the ultrafast absorption recovery (150 fs at a wavelength of 4.5 μm) and the measurement of the saturation energy (0.5 pJ/μm^2 at 1.48 μm) were carried out. Moreover, the ISBT was observed in a ridge waveguide structure and the insertion loss was measured for a GaN waveguide. Finally, simulation results indicated that the switching is achievable with extinction ratios of more than 10 dB at input pulse energies of 10-25 pJ. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Intersubband transition / Quantum well / GaN / All-optical switch |
| Paper # | OPE2003-225,LQE2003-162 |
| Date of Issue |
| Conference Information | |
| Committee | LQE |
|---|---|
| Conference Date | 2003/12/13(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
|---|---|
| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | GaN-based intersubband transitions for ultrafast optical switching |
| Sub Title (in English) | |
| Keyword(1) | Intersubband transition |
| Keyword(2) | Quantum well |
| Keyword(3) | GaN |
| Keyword(4) | All-optical switch |
| 1st Author's Name | Norio Iizuka |
| 1st Author's Affiliation | Corporate R & D Center, Toshiba Corp.() |
| 2nd Author's Name | Kei Kaneko |
| 2nd Author's Affiliation | Corporate R & D Center, Toshiba Corp. |
| 3rd Author's Name | Nobuo Suzuki |
| 3rd Author's Affiliation | Corporate R & D Center, Toshiba Corp. |
| Date | 2003/12/13 |
| Paper # | OPE2003-225,LQE2003-162 |
| Volume (vol) | vol.103 |
| Number (no) | 528 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |