| Presentation | 2003/12/13 GaInAsP/InP Long Wavelength Quantum-Wire Lasers Shigehisa ARAI, Hideki YAGI, Takuya SANO, Kazuya OHIRA, Takeo MARUYAMA, Anisul HAQUE, Plumwongrot DHANORM, Shigeo TAMURA, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We report the structural properties and losing characteristics of GaInAsP/InP multiple-quantum-wire lasers fabricated by electron beam lithography, CH_4/H_2-reactive ion etching and 2-step organometallic vapor-phase-epitaxial growth processes. Good size uniformity of multiple-quantum-wire structures (wire widths of 18 nm and 27 nm in a period of 80 nm) was obtained with standard deviations of less than ±2 nm. We experimentally demonstrated that low-damage etched/regrown interfaces of quantum-wire structures can be realized by using a partially strain-compensated quantum-well structure. Lasing properties of 5-quantum-well wirelike lasers (wire width of 43 nm in a period of 100 nm) superior to those of quantum-film lasers prepared on the same initial wafer due to a volume effect were found at temperatures up to 85℃. Finally, room temperature (RT)-continuous wave (CW) operation of multiple-quantum-wire lasers (wire width of 23 nm in a period of 80 nm, 5-stacked quantum-wires) was achieved, and the good reliable operation of this quantum-wire laser was shown for the first time in lifetime measurement under the RT-CW condition. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Quantum-Wire Laser / GaInAsP/InP / Strain-Compensated Quantum-Well structure / CH_4/H_2-RIE / OMVPE Regrowth |
| Paper # | OPE2003-220,LQE2003-157 |
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| Conference Information | |
| Committee | LQE |
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| Conference Date | 2003/12/13(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | GaInAsP/InP Long Wavelength Quantum-Wire Lasers |
| Sub Title (in English) | |
| Keyword(1) | Quantum-Wire Laser |
| Keyword(2) | GaInAsP/InP |
| Keyword(3) | Strain-Compensated Quantum-Well structure |
| Keyword(4) | CH_4/H_2-RIE |
| Keyword(5) | OMVPE Regrowth |
| 1st Author's Name | Shigehisa ARAI |
| 1st Author's Affiliation | Research Center for Quantum Effect Electronics, Tokyo Institute of Technology:JST-CREST Kawaguchi Center Building() |
| 2nd Author's Name | Hideki YAGI |
| 2nd Author's Affiliation | Research Center for Quantum Effect Electronics, Tokyo Institute of Technology |
| 3rd Author's Name | Takuya SANO |
| 3rd Author's Affiliation | Research Center for Quantum Effect Electronics, Tokyo Institute of Technology |
| 4th Author's Name | Kazuya OHIRA |
| 4th Author's Affiliation | Research Center for Quantum Effect Electronics, Tokyo Institute of Technology |
| 5th Author's Name | Takeo MARUYAMA |
| 5th Author's Affiliation | Research Center for Quantum Effect Electronics, Tokyo Institute of Technology:JST-CREST Kawaguchi Center Building |
| 6th Author's Name | Anisul HAQUE |
| 6th Author's Affiliation | Research Center for Quantum Effect Electronics, Tokyo Institute of Technology:JST-CREST Kawaguchi Center Building |
| 7th Author's Name | Plumwongrot DHANORM |
| 7th Author's Affiliation | Research Center for Quantum Effect Electronics, Tokyo Institute of Technology |
| 8th Author's Name | Shigeo TAMURA |
| 8th Author's Affiliation | Research Center for Quantum Effect Electronics, Tokyo Institute of Technology:JST-CREST Kawaguchi Center Building |
| Date | 2003/12/13 |
| Paper # | OPE2003-220,LQE2003-157 |
| Volume (vol) | vol.103 |
| Number (no) | 528 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |