Presentation 2003/12/11
40-Gb/s directly modulated operation in 1.1 -μm GaInAs modulation-doped MQW lasers
Kouji Nakahara, Shigehisa Tanaka, Sumiko Fujisaki, Masahiko Kondow, Makoto Kudo,
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Abstract(in English) It is strongly expected that directly modulated lasers will be used for 40 Gb/s light sources that connects next generation core routers. As basically research for directly modulation at 40 Gb/s, we investigate the optimization of the QW structure and the p-type modulation doping in GaInAs MQW lasers. The meaured result shows that relaxation occilation frequency, which is one of important factors for high-speed operation, increases to 25 GHz. Moreover, it is successfully achieved that the laser operates at 40 Gb/s with a clear eye opening.
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Keyword(in English) GaInAs / 40Gb/s / directly modulation / modulation doping / MQW / laser
Paper # OPE2003-182,LQE2003-119
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Committee LQE
Conference Date 2003/12/11(1days)
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Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) 40-Gb/s directly modulated operation in 1.1 -μm GaInAs modulation-doped MQW lasers
Sub Title (in English)
Keyword(1) GaInAs
Keyword(2) 40Gb/s
Keyword(3) directly modulation
Keyword(4) modulation doping
Keyword(5) MQW
Keyword(6) laser
1st Author's Name Kouji Nakahara
1st Author's Affiliation Central Research Laboratory, Hitachi, Ltd.()
2nd Author's Name Shigehisa Tanaka
2nd Author's Affiliation Central Research Laboratory, Hitachi, Ltd.
3rd Author's Name Sumiko Fujisaki
3rd Author's Affiliation Central Research Laboratory, Hitachi, Ltd.
4th Author's Name Masahiko Kondow
4th Author's Affiliation Central Research Laboratory, Hitachi, Ltd.
5th Author's Name Makoto Kudo
5th Author's Affiliation Central Research Laboratory, Hitachi, Ltd.
Date 2003/12/11
Paper # OPE2003-182,LQE2003-119
Volume (vol) vol.103
Number (no) 526
Page pp.pp.-
#Pages 4
Date of Issue