Presentation 2003/9/25
Fabrication of GaInNP MQW-structure LED grown by a laser-assisted MOCVD
Seikoh YOSHIDA, Jiang LI, Yoshiteru ITOH,
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Abstract(in English) GaNP and related materials are a new promising material for a light-emitting diode (LED) over a wider range of wavelengths from ultraviolet to red due to gigantic band gap bowing. N-rich GaInNP was grown using a laser-assisted MOCVD. Furthermore, we fabricated the GaInNP multiple quantum well structure (MQW) LED. The electroluminescence measurement of the LED was carried out. A bright 445nm emission was observed. It was thus demonstrated that GaInNP LED is very promising for a blue LED.
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Keyword(in English) GaN / GaInNP / LED / EL / MOCVD
Paper # LQE2003-53
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Committee LQE
Conference Date 2003/9/25(1days)
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Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Fabrication of GaInNP MQW-structure LED grown by a laser-assisted MOCVD
Sub Title (in English)
Keyword(1) GaN
Keyword(2) GaInNP
Keyword(3) LED
Keyword(4) EL
Keyword(5) MOCVD
1st Author's Name Seikoh YOSHIDA
1st Author's Affiliation Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd.()
2nd Author's Name Jiang LI
2nd Author's Affiliation Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd.
3rd Author's Name Yoshiteru ITOH
3rd Author's Affiliation Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd.
Date 2003/9/25
Paper # LQE2003-53
Volume (vol) vol.103
Number (no) 345
Page pp.pp.-
#Pages 4
Date of Issue