Presentation | 2003/9/25 Fabrication of GaInNP MQW-structure LED grown by a laser-assisted MOCVD Seikoh YOSHIDA, Jiang LI, Yoshiteru ITOH, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | GaNP and related materials are a new promising material for a light-emitting diode (LED) over a wider range of wavelengths from ultraviolet to red due to gigantic band gap bowing. N-rich GaInNP was grown using a laser-assisted MOCVD. Furthermore, we fabricated the GaInNP multiple quantum well structure (MQW) LED. The electroluminescence measurement of the LED was carried out. A bright 445nm emission was observed. It was thus demonstrated that GaInNP LED is very promising for a blue LED. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | GaN / GaInNP / LED / EL / MOCVD |
Paper # | LQE2003-53 |
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Conference Information | |
Committee | LQE |
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Conference Date | 2003/9/25(1days) |
Place (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Lasers and Quantum Electronics (LQE) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Fabrication of GaInNP MQW-structure LED grown by a laser-assisted MOCVD |
Sub Title (in English) | |
Keyword(1) | GaN |
Keyword(2) | GaInNP |
Keyword(3) | LED |
Keyword(4) | EL |
Keyword(5) | MOCVD |
1st Author's Name | Seikoh YOSHIDA |
1st Author's Affiliation | Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd.() |
2nd Author's Name | Jiang LI |
2nd Author's Affiliation | Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd. |
3rd Author's Name | Yoshiteru ITOH |
3rd Author's Affiliation | Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd. |
Date | 2003/9/25 |
Paper # | LQE2003-53 |
Volume (vol) | vol.103 |
Number (no) | 345 |
Page | pp.pp.- |
#Pages | 4 |
Date of Issue |