| Presentation | 2002/5/10 Molecularbeam Epitaxy of High Quality Nitride Semiconductors and Fabrication of Resonant Tunneling Diodes Akihiko KIKUCHI, Tetsuo TACHIBANA, Katsumi KISHINO, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The polarity control technology for Ga-polar GaN with molecular beam epitaxy using rf-plasma nitrogen source (RF-MBE) was established. Inserting high-temperature grown AlN multiple interlayers (HT-AlN-MIL) into MBE-grown GaN at 750℃ suppressed the propagation of dislocations into upper GaN, and the electrical and optical properties were improved. The HT-AlN-MIL was deposited on GaN templates grown by metal organic chemical vapor deposition (MOCVD), followed by GaN grown by MBE. The dislocations with screw character in MBE-grown GaN were reduced by about two orders of magnitude compared to those of the bottom GaN template, which produced the step-like surface morphology for MBE-GaN. AlN/GaN double barrier resonant tunneling diodes (RTD) were fabricated by RF-MBE on MOCVD-GaN templates, using this dislocation reduction technique. Clear negative differential resistance with a peak-to-valley ratio over 30 has been obtained. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Nitride Semiconductor / Molecular Beam Epitaxy / Gallium Nitride / Aluminum Nitride / Multiple Interlayer / Resonant Tunneling Diode |
| Paper # | LQE2002-18 |
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| Conference Information | |
| Committee | LQE |
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| Conference Date | 2002/5/10(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Molecularbeam Epitaxy of High Quality Nitride Semiconductors and Fabrication of Resonant Tunneling Diodes |
| Sub Title (in English) | |
| Keyword(1) | Nitride Semiconductor |
| Keyword(2) | Molecular Beam Epitaxy |
| Keyword(3) | Gallium Nitride |
| Keyword(4) | Aluminum Nitride |
| Keyword(5) | Multiple Interlayer |
| Keyword(6) | Resonant Tunneling Diode |
| 1st Author's Name | Akihiko KIKUCHI |
| 1st Author's Affiliation | Department of Electrical & Electronics Engineering, Sophia University() |
| 2nd Author's Name | Tetsuo TACHIBANA |
| 2nd Author's Affiliation | Department of Electrical & Electronics Engineering, Sophia University |
| 3rd Author's Name | Katsumi KISHINO |
| 3rd Author's Affiliation | Department of Electrical & Electronics Engineering, Sophia University |
| Date | 2002/5/10 |
| Paper # | LQE2002-18 |
| Volume (vol) | vol.102 |
| Number (no) | 62 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |