Presentation | 2002/5/10 Molecularbeam Epitaxy of High Quality Nitride Semiconductors and Fabrication of Resonant Tunneling Diodes Akihiko KIKUCHI, Tetsuo TACHIBANA, Katsumi KISHINO, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | The polarity control technology for Ga-polar GaN with molecular beam epitaxy using rf-plasma nitrogen source (RF-MBE) was established. Inserting high-temperature grown AlN multiple interlayers (HT-AlN-MIL) into MBE-grown GaN at 750℃ suppressed the propagation of dislocations into upper GaN, and the electrical and optical properties were improved. The HT-AlN-MIL was deposited on GaN templates grown by metal organic chemical vapor deposition (MOCVD), followed by GaN grown by MBE. The dislocations with screw character in MBE-grown GaN were reduced by about two orders of magnitude compared to those of the bottom GaN template, which produced the step-like surface morphology for MBE-GaN. AlN/GaN double barrier resonant tunneling diodes (RTD) were fabricated by RF-MBE on MOCVD-GaN templates, using this dislocation reduction technique. Clear negative differential resistance with a peak-to-valley ratio over 30 has been obtained. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Nitride Semiconductor / Molecular Beam Epitaxy / Gallium Nitride / Aluminum Nitride / Multiple Interlayer / Resonant Tunneling Diode |
Paper # | LQE2002-18 |
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Conference Information | |
Committee | LQE |
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Conference Date | 2002/5/10(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Lasers and Quantum Electronics (LQE) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Molecularbeam Epitaxy of High Quality Nitride Semiconductors and Fabrication of Resonant Tunneling Diodes |
Sub Title (in English) | |
Keyword(1) | Nitride Semiconductor |
Keyword(2) | Molecular Beam Epitaxy |
Keyword(3) | Gallium Nitride |
Keyword(4) | Aluminum Nitride |
Keyword(5) | Multiple Interlayer |
Keyword(6) | Resonant Tunneling Diode |
1st Author's Name | Akihiko KIKUCHI |
1st Author's Affiliation | Department of Electrical & Electronics Engineering, Sophia University() |
2nd Author's Name | Tetsuo TACHIBANA |
2nd Author's Affiliation | Department of Electrical & Electronics Engineering, Sophia University |
3rd Author's Name | Katsumi KISHINO |
3rd Author's Affiliation | Department of Electrical & Electronics Engineering, Sophia University |
Date | 2002/5/10 |
Paper # | LQE2002-18 |
Volume (vol) | vol.102 |
Number (no) | 62 |
Page | pp.pp.- |
#Pages | 4 |
Date of Issue |