Presentation 2002/6/8
Structural Defects in GaN-based Semiconductor Laser Diodes
Shigetaka Tomiya, Tomonori Hino, Takao Miyajima, Motonobu Takeya, Masao Ikeda,
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Abstract(in English) We have investigated dislocations in GaN-based laser diodes (LDs) on epitaxial lateral overgrown (ELO) GaN layers using transmission electron microscopy and cathodoluminescnce microscopy and found a correlation between dislocations and device reliability. The origin of dislocations in the wing regions of ELO structures is the extension of defects in highly defective regions near the GaN layer/substrate interface of the seed regions. In some LDs with a short lifetime, dislocations lying in the c-plane were formed below the active regions, bent towards the c-axis and threaded upwards to active regions. These newly created dislocations can cause to be detrimental to the device lifetime.
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Keyword(in English) GaN-based Laser Diode / ELO / Dislocations / Transmission Electron Microscopy / Cathodoluminescence
Paper # LQE2002-89
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Committee LQE
Conference Date 2002/6/8(1days)
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Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Structural Defects in GaN-based Semiconductor Laser Diodes
Sub Title (in English)
Keyword(1) GaN-based Laser Diode
Keyword(2) ELO
Keyword(3) Dislocations
Keyword(4) Transmission Electron Microscopy
Keyword(5) Cathodoluminescence
1st Author's Name Shigetaka Tomiya
1st Author's Affiliation Technical Solutions Center, Sony Corp.()
2nd Author's Name Tomonori Hino
2nd Author's Affiliation Core Technology Network Company, Sony Corp.
3rd Author's Name Takao Miyajima
3rd Author's Affiliation Core Technology Network Company, Sony Corp.
4th Author's Name Motonobu Takeya
4th Author's Affiliation Sony Shiroishi Semiconductor, Inc.
5th Author's Name Masao Ikeda
5th Author's Affiliation Sony Shiroishi Semiconductor, Inc.
Date 2002/6/8
Paper # LQE2002-89
Volume (vol) vol.102
Number (no) 119
Page pp.pp.-
#Pages 4
Date of Issue