Presentation 2002/6/8
Developments of Blue-violet Laser-diode Structures suitable for Mass Production (RiS-LD)
A. A. Yamaguchi, M. Kuramoto, A. Kimura, N. Futagawa, C. Sasaoka, M. Nido, H. Sunakawa, A. Usui,
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Abstract(in English) We have developed novel ridge-type blue-violet laser diodes fabricated by selective re-growth on GaN substrates (RiS-LD). In this paper, we focus on key issues concerning the ridge by selective re-growth in the LDs, and report the improvement of laser characteristics based on detailed analyses of these issues. First, we investigate the compositional modulation in AlGaN-alloy selective growth by systematical experiments, and clarify the mechanism. This enables us to control precisely Al mole fraction of p-AlGaN cladding layers in the ridges, and we have successfully realized a superior beam profile with the lowest aspect ratio of 2.0. Second, we verify the internal loss of RiS-LDs mainly originates from absorption in the re-growth boundary and Mg-doped GaN layer. To avoid these absorptive regions, we shift the perpendicular optical field to n-cladding side. This reduces the loss significantly, and a low threshold current of 10 mA has been obtained. These superior characteristics are owing to the fabrication method of the LDs, which combines epitaxial growth on high-quality GaN substrates with the ridge formation using selective-growth technique.
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Keyword(in English) GaN / laser diodes / ridge geometry / selective growth / GaN substrate / internal loss
Paper # LQE2002-86
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Committee LQE
Conference Date 2002/6/8(1days)
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Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Developments of Blue-violet Laser-diode Structures suitable for Mass Production (RiS-LD)
Sub Title (in English)
Keyword(1) GaN
Keyword(2) laser diodes
Keyword(3) ridge geometry
Keyword(4) selective growth
Keyword(5) GaN substrate
Keyword(6) internal loss
1st Author's Name A. A. Yamaguchi
1st Author's Affiliation Photonic and Wireless Devices Research Laboratories, NEC Corporation()
2nd Author's Name M. Kuramoto
2nd Author's Affiliation Photonic and Wireless Devices Research Laboratories, NEC Corporation
3rd Author's Name A. Kimura
3rd Author's Affiliation Photonic and Wireless Devices Research Laboratories, NEC Corporation
4th Author's Name N. Futagawa
4th Author's Affiliation Photonic and Wireless Devices Research Laboratories, NEC Corporation
5th Author's Name C. Sasaoka
5th Author's Affiliation Photonic and Wireless Devices Research Laboratories, NEC Corporation
6th Author's Name M. Nido
6th Author's Affiliation Photonic and Wireless Devices Research Laboratories, NEC Corporation
7th Author's Name H. Sunakawa
7th Author's Affiliation Photonic and Wireless Devices Research Laboratories, NEC Corporation
8th Author's Name A. Usui
8th Author's Affiliation Photonic and Wireless Devices Research Laboratories, NEC Corporation
Date 2002/6/8
Paper # LQE2002-86
Volume (vol) vol.102
Number (no) 119
Page pp.pp.-
#Pages 4
Date of Issue