Presentation | 2002/6/8 Developments of Blue-violet Laser-diode Structures suitable for Mass Production (RiS-LD) A. A. Yamaguchi, M. Kuramoto, A. Kimura, N. Futagawa, C. Sasaoka, M. Nido, H. Sunakawa, A. Usui, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | We have developed novel ridge-type blue-violet laser diodes fabricated by selective re-growth on GaN substrates (RiS-LD). In this paper, we focus on key issues concerning the ridge by selective re-growth in the LDs, and report the improvement of laser characteristics based on detailed analyses of these issues. First, we investigate the compositional modulation in AlGaN-alloy selective growth by systematical experiments, and clarify the mechanism. This enables us to control precisely Al mole fraction of p-AlGaN cladding layers in the ridges, and we have successfully realized a superior beam profile with the lowest aspect ratio of 2.0. Second, we verify the internal loss of RiS-LDs mainly originates from absorption in the re-growth boundary and Mg-doped GaN layer. To avoid these absorptive regions, we shift the perpendicular optical field to n-cladding side. This reduces the loss significantly, and a low threshold current of 10 mA has been obtained. These superior characteristics are owing to the fabrication method of the LDs, which combines epitaxial growth on high-quality GaN substrates with the ridge formation using selective-growth technique. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | GaN / laser diodes / ridge geometry / selective growth / GaN substrate / internal loss |
Paper # | LQE2002-86 |
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Conference Information | |
Committee | LQE |
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Conference Date | 2002/6/8(1days) |
Place (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Lasers and Quantum Electronics (LQE) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Developments of Blue-violet Laser-diode Structures suitable for Mass Production (RiS-LD) |
Sub Title (in English) | |
Keyword(1) | GaN |
Keyword(2) | laser diodes |
Keyword(3) | ridge geometry |
Keyword(4) | selective growth |
Keyword(5) | GaN substrate |
Keyword(6) | internal loss |
1st Author's Name | A. A. Yamaguchi |
1st Author's Affiliation | Photonic and Wireless Devices Research Laboratories, NEC Corporation() |
2nd Author's Name | M. Kuramoto |
2nd Author's Affiliation | Photonic and Wireless Devices Research Laboratories, NEC Corporation |
3rd Author's Name | A. Kimura |
3rd Author's Affiliation | Photonic and Wireless Devices Research Laboratories, NEC Corporation |
4th Author's Name | N. Futagawa |
4th Author's Affiliation | Photonic and Wireless Devices Research Laboratories, NEC Corporation |
5th Author's Name | C. Sasaoka |
5th Author's Affiliation | Photonic and Wireless Devices Research Laboratories, NEC Corporation |
6th Author's Name | M. Nido |
6th Author's Affiliation | Photonic and Wireless Devices Research Laboratories, NEC Corporation |
7th Author's Name | H. Sunakawa |
7th Author's Affiliation | Photonic and Wireless Devices Research Laboratories, NEC Corporation |
8th Author's Name | A. Usui |
8th Author's Affiliation | Photonic and Wireless Devices Research Laboratories, NEC Corporation |
Date | 2002/6/8 |
Paper # | LQE2002-86 |
Volume (vol) | vol.102 |
Number (no) | 119 |
Page | pp.pp.- |
#Pages | 4 |
Date of Issue |