| Presentation | 2002/6/8 Developments of Blue-violet Laser-diode Structures suitable for Mass Production (RiS-LD) A. A. Yamaguchi, M. Kuramoto, A. Kimura, N. Futagawa, C. Sasaoka, M. Nido, H. Sunakawa, A. Usui, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have developed novel ridge-type blue-violet laser diodes fabricated by selective re-growth on GaN substrates (RiS-LD). In this paper, we focus on key issues concerning the ridge by selective re-growth in the LDs, and report the improvement of laser characteristics based on detailed analyses of these issues. First, we investigate the compositional modulation in AlGaN-alloy selective growth by systematical experiments, and clarify the mechanism. This enables us to control precisely Al mole fraction of p-AlGaN cladding layers in the ridges, and we have successfully realized a superior beam profile with the lowest aspect ratio of 2.0. Second, we verify the internal loss of RiS-LDs mainly originates from absorption in the re-growth boundary and Mg-doped GaN layer. To avoid these absorptive regions, we shift the perpendicular optical field to n-cladding side. This reduces the loss significantly, and a low threshold current of 10 mA has been obtained. These superior characteristics are owing to the fabrication method of the LDs, which combines epitaxial growth on high-quality GaN substrates with the ridge formation using selective-growth technique. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN / laser diodes / ridge geometry / selective growth / GaN substrate / internal loss |
| Paper # | LQE2002-86 |
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| Conference Information | |
| Committee | LQE |
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| Conference Date | 2002/6/8(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Developments of Blue-violet Laser-diode Structures suitable for Mass Production (RiS-LD) |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | laser diodes |
| Keyword(3) | ridge geometry |
| Keyword(4) | selective growth |
| Keyword(5) | GaN substrate |
| Keyword(6) | internal loss |
| 1st Author's Name | A. A. Yamaguchi |
| 1st Author's Affiliation | Photonic and Wireless Devices Research Laboratories, NEC Corporation() |
| 2nd Author's Name | M. Kuramoto |
| 2nd Author's Affiliation | Photonic and Wireless Devices Research Laboratories, NEC Corporation |
| 3rd Author's Name | A. Kimura |
| 3rd Author's Affiliation | Photonic and Wireless Devices Research Laboratories, NEC Corporation |
| 4th Author's Name | N. Futagawa |
| 4th Author's Affiliation | Photonic and Wireless Devices Research Laboratories, NEC Corporation |
| 5th Author's Name | C. Sasaoka |
| 5th Author's Affiliation | Photonic and Wireless Devices Research Laboratories, NEC Corporation |
| 6th Author's Name | M. Nido |
| 6th Author's Affiliation | Photonic and Wireless Devices Research Laboratories, NEC Corporation |
| 7th Author's Name | H. Sunakawa |
| 7th Author's Affiliation | Photonic and Wireless Devices Research Laboratories, NEC Corporation |
| 8th Author's Name | A. Usui |
| 8th Author's Affiliation | Photonic and Wireless Devices Research Laboratories, NEC Corporation |
| Date | 2002/6/8 |
| Paper # | LQE2002-86 |
| Volume (vol) | vol.102 |
| Number (no) | 119 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |