Presentation 2002/6/8
GaN lasers on GaAs substrates using laser lift-off technique
Hideaki MARUTA, Masayuki SONOBE, Mamoru MIYACHI, Atsushi WATANABE, Hiroyuki OTA, Kiyofumi CHIKUMA,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) GaN-based LDs with GaAs support were fabricated by separating the nitrides from the sapphire substrate using laser lift-off (LLO) technique. The threshold current and the threshold voltage were 78mA and 6.4V, respectively. Excellent mirror facets with high process yields were achieved due to cleavage on the GaAs substrates. The simulations gave the result that the thermal conductivity increases by bonding GaN side to the stem directly. The thermal resistance of 21℃/W was achieved in LDs using LLO technique.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Laser Lift-off / GaN / GaAs / Laser
Paper # LQE2002-85
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Conference Information
Committee LQE
Conference Date 2002/6/8(1days)
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Paper Information
Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) GaN lasers on GaAs substrates using laser lift-off technique
Sub Title (in English)
Keyword(1) Laser Lift-off
Keyword(2) GaN
Keyword(3) GaAs
Keyword(4) Laser
1st Author's Name Hideaki MARUTA
1st Author's Affiliation ROHM()
2nd Author's Name Masayuki SONOBE
2nd Author's Affiliation ROHM
3rd Author's Name Mamoru MIYACHI
3rd Author's Affiliation PIONEER
4th Author's Name Atsushi WATANABE
4th Author's Affiliation PIONEER
5th Author's Name Hiroyuki OTA
5th Author's Affiliation PIONEER
6th Author's Name Kiyofumi CHIKUMA
6th Author's Affiliation PIONEER
Date 2002/6/8
Paper # LQE2002-85
Volume (vol) vol.102
Number (no) 119
Page pp.pp.-
#Pages 3
Date of Issue