Presentation 2002/6/8
GaNP LED using a laser-assisted MOCVD
Seikoh YOSHIDA, Yoshiteru ITOH, Junjiroh KIKAWA, Kentaroh ONABE, Yasuhiro SHIRAKI,
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Abstract(in English) GaNP is a new promising material for a light-emitting diode (LED) over a wider range of wavelengths from ultraviolet to red due to gigantic band gap bowing. GaNP was grown using a laser-assisted MOCVD. Furthermore, we fabricated the GaNP single quantum well structure LED. The electroluminescence measurement of the LED was carried out. When the injection current was increased, the peaks of 2.9 eV and 2.25 eV were shifted towards the high energy side.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) GaN / GaNP / LED / EL / MOCVD
Paper # LQE2002-83
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Conference Information
Committee LQE
Conference Date 2002/6/8(1days)
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Paper Information
Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) GaNP LED using a laser-assisted MOCVD
Sub Title (in English)
Keyword(1) GaN
Keyword(2) GaNP
Keyword(3) LED
Keyword(4) EL
Keyword(5) MOCVD
1st Author's Name Seikoh YOSHIDA
1st Author's Affiliation Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd.()
2nd Author's Name Yoshiteru ITOH
2nd Author's Affiliation Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd.
3rd Author's Name Junjiroh KIKAWA
3rd Author's Affiliation Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd.
4th Author's Name Kentaroh ONABE
4th Author's Affiliation University of Tokyo
5th Author's Name Yasuhiro SHIRAKI
5th Author's Affiliation University of Tokyo
Date 2002/6/8
Paper # LQE2002-83
Volume (vol) vol.102
Number (no) 119
Page pp.pp.-
#Pages 4
Date of Issue