Presentation 2002/6/8
Fabrication of UV-LED on AlN templates
Hiroaki Okagawa, Youichirou Ohuchi, Takashi Tsunekawa, Kazuyuki Tadatomo,
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Abstract(in English) Ultraviolet (UV) light-emitting diodes (LEDs) were fabricated on an AlN-Template and a sapphire substrate. The full-width at half maximum of the X-ray diffraction rocking curve for GaN (10-12) reflection of the LED structure grown on an AlN-Template was 177 arcsec. The dislocation density of the LED structure grown on an AlN-Template determined by a Cathode-luminescence observation was 2.0 × 10^8cm^-2 The quality of the LED structure grown on an AlN-Template was better than that of structure grown on a sapphire substrate. When the these LEDs was operated at a forward-biased current of 20 mA at room temperature, the emission wavelength and the output power were approximately 382 nm, 4mW, respectively.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) AlN-Template / UV-LED
Paper # LQE2002-82
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Conference Information
Committee LQE
Conference Date 2002/6/8(1days)
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Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Fabrication of UV-LED on AlN templates
Sub Title (in English)
Keyword(1) AlN-Template
Keyword(2) UV-LED
1st Author's Name Hiroaki Okagawa
1st Author's Affiliation Telecommunication & Photonics Research Lab. Mitsubishi Cable Industries, LTD.()
2nd Author's Name Youichirou Ohuchi
2nd Author's Affiliation Telecommunication & Photonics Research Lab. Mitsubishi Cable Industries, LTD.
3rd Author's Name Takashi Tsunekawa
3rd Author's Affiliation Telecommunication & Photonics Research Lab. Mitsubishi Cable Industries, LTD.
4th Author's Name Kazuyuki Tadatomo
4th Author's Affiliation Telecommunication & Photonics Research Lab. Mitsubishi Cable Industries, LTD.
Date 2002/6/8
Paper # LQE2002-82
Volume (vol) vol.102
Number (no) 119
Page pp.pp.-
#Pages 4
Date of Issue