| Presentation | 2002/6/8 Luminescence Characteristics of GaInN Based LEDs and High Power Devices Satoshi WATANABE, |
|---|---|
| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | GaInN based LEDs are well known to show peculiar device characteristics due to a strain induced piezoelectric field and localization of carriers. Two remarkable features are the blue shift of luminescence wavelength with increasing injected current and the behavior of the external quantum efficiency as a function of current. We have studied these device characteristics experimentally and discussed their relationship with widely proposed recombination models. Additionally, some issues to further improve LED efficiency have been discussed and current technologies for GaInN based high efficiency and high power LEDs have been shown. An optical flux as much as 100 lm from a single packaged LED lamp have been realized by using a 1mm x 1mm large junction area chip. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaInN quantum wells / localization effect / piezoelectric field effect / efficiency curve / high power LEDs |
| Paper # | LQE2002-80 |
| Date of Issue |
| Conference Information | |
| Committee | LQE |
|---|---|
| Conference Date | 2002/6/8(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Luminescence Characteristics of GaInN Based LEDs and High Power Devices |
| Sub Title (in English) | |
| Keyword(1) | GaInN quantum wells |
| Keyword(2) | localization effect |
| Keyword(3) | piezoelectric field effect |
| Keyword(4) | efficiency curve |
| Keyword(5) | high power LEDs |
| 1st Author's Name | Satoshi WATANABE |
| 1st Author's Affiliation | Agilent Laboratories, Agilent Technologies() |
| Date | 2002/6/8 |
| Paper # | LQE2002-80 |
| Volume (vol) | vol.102 |
| Number (no) | 119 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |