Presentation 2002/6/8
Growth of new TlInGaAs semiconductors and room temperature operation of TlInGaAs/InP DH laser diodes
Atsushi Fujiwara, Hwi Jae Lee, Akiko Mizobata, Hajime Asahi,
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Abstract(in English) TlInGaAs quaternary layers are successfully grown on InP substrates by gas source molecular beam epitaxy. TlInGaAs is the alloy consisting of semimetal TlAs and semiconductor InGaAs. We recently proposed this new semiconductor material system for the temperature insensitive wavelength laser diodes,which is important for the WDM optical fiber communication systems. We have already observed very small temperture variation of the EL peak energy as small as -0.088meV/K for the TlInGaAs/InP DH LED. This paper discribes the successful fabrication of TlInGaAs/InP DH LD and their properties.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) tallium containing semiconductor / long wavelength laser diode / temperature independent bandgap / LED / LD
Paper # LQE2002-79
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Committee LQE
Conference Date 2002/6/8(1days)
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Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Growth of new TlInGaAs semiconductors and room temperature operation of TlInGaAs/InP DH laser diodes
Sub Title (in English)
Keyword(1) tallium containing semiconductor
Keyword(2) long wavelength laser diode
Keyword(3) temperature independent bandgap
Keyword(4) LED
Keyword(5) LD
1st Author's Name Atsushi Fujiwara
1st Author's Affiliation The Institute of scientific and Industrial Research,Osaka University()
2nd Author's Name Hwi Jae Lee
2nd Author's Affiliation The Institute of scientific and Industrial Research,Osaka University
3rd Author's Name Akiko Mizobata
3rd Author's Affiliation The Institute of scientific and Industrial Research,Osaka University
4th Author's Name Hajime Asahi
4th Author's Affiliation The Institute of scientific and Industrial Research,Osaka University
Date 2002/6/8
Paper # LQE2002-79
Volume (vol) vol.102
Number (no) 119
Page pp.pp.-
#Pages 4
Date of Issue