Presentation | 2002/6/8 Growth of new TlInGaAs semiconductors and room temperature operation of TlInGaAs/InP DH laser diodes Atsushi Fujiwara, Hwi Jae Lee, Akiko Mizobata, Hajime Asahi, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | TlInGaAs quaternary layers are successfully grown on InP substrates by gas source molecular beam epitaxy. TlInGaAs is the alloy consisting of semimetal TlAs and semiconductor InGaAs. We recently proposed this new semiconductor material system for the temperature insensitive wavelength laser diodes,which is important for the WDM optical fiber communication systems. We have already observed very small temperture variation of the EL peak energy as small as -0.088meV/K for the TlInGaAs/InP DH LED. This paper discribes the successful fabrication of TlInGaAs/InP DH LD and their properties. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | tallium containing semiconductor / long wavelength laser diode / temperature independent bandgap / LED / LD |
Paper # | LQE2002-79 |
Date of Issue |
Conference Information | |
Committee | LQE |
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Conference Date | 2002/6/8(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Lasers and Quantum Electronics (LQE) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Growth of new TlInGaAs semiconductors and room temperature operation of TlInGaAs/InP DH laser diodes |
Sub Title (in English) | |
Keyword(1) | tallium containing semiconductor |
Keyword(2) | long wavelength laser diode |
Keyword(3) | temperature independent bandgap |
Keyword(4) | LED |
Keyword(5) | LD |
1st Author's Name | Atsushi Fujiwara |
1st Author's Affiliation | The Institute of scientific and Industrial Research,Osaka University() |
2nd Author's Name | Hwi Jae Lee |
2nd Author's Affiliation | The Institute of scientific and Industrial Research,Osaka University |
3rd Author's Name | Akiko Mizobata |
3rd Author's Affiliation | The Institute of scientific and Industrial Research,Osaka University |
4th Author's Name | Hajime Asahi |
4th Author's Affiliation | The Institute of scientific and Industrial Research,Osaka University |
Date | 2002/6/8 |
Paper # | LQE2002-79 |
Volume (vol) | vol.102 |
Number (no) | 119 |
Page | pp.pp.- |
#Pages | 4 |
Date of Issue |