Presentation 2002/6/8
Growth of AlN/GaN Quantum-Cascade Structure by Hot Wall Eptaxy and Its Structural Characterization
A. Ishida, H. Nagasawa, Y. Inoue, H. Tatsuoka, H. Fujiyasu, H. Kan, H. Makino, T. Yao,
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Abstract(in English) [(AlN)_1/(GaN)_n1]_m/(AlN)_n2 quantum cascade structure was prepared by hot wall epitaxy, and the structure was characterized by transmission electron microscopy and x-ray diffraction. Clear and well-controlled quantum cascade structure was observed by TEM. And (10-14) x-ray mapping measurement showed that the 20 periods of QC structure was grown coherently on the GaN film.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) GaN / AlN / quantum well / cascade / TEM / x-ray diffraction / superlattice
Paper # LQE2002-78
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Committee LQE
Conference Date 2002/6/8(1days)
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Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Growth of AlN/GaN Quantum-Cascade Structure by Hot Wall Eptaxy and Its Structural Characterization
Sub Title (in English)
Keyword(1) GaN
Keyword(2) AlN
Keyword(3) quantum well
Keyword(4) cascade
Keyword(5) TEM
Keyword(6) x-ray diffraction
Keyword(7) superlattice
1st Author's Name A. Ishida
1st Author's Affiliation Department of Electrical and Electronic Engineering, Shizuoka University()
2nd Author's Name H. Nagasawa
2nd Author's Affiliation Department of Electrical and Electronic Engineering, Shizuoka University
3rd Author's Name Y. Inoue
3rd Author's Affiliation Department of Electrical and Electronic Engineering, Shizuoka University
4th Author's Name H. Tatsuoka
4th Author's Affiliation Department of Electrical and Electronic Engineering, Shizuoka University
5th Author's Name H. Fujiyasu
5th Author's Affiliation Department of Electrical and Electronic Engineering, Shizuoka University
6th Author's Name H. Kan
6th Author's Affiliation Central Research Lab.
7th Author's Name H. Makino
7th Author's Affiliation Institute for Materials Research, Tohoku University
8th Author's Name T. Yao
8th Author's Affiliation Institute for Materials Research, Tohoku University
Date 2002/6/8
Paper # LQE2002-78
Volume (vol) vol.102
Number (no) 119
Page pp.pp.-
#Pages 4
Date of Issue