| Presentation | 2002/6/8 Growth of GaN/AlN Quantum Wells and Characteristics of Intersubband Transition Norio IIZUKA, Kei KANEKO, Nobuo SUZUKI, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | GaN/AlN quantum well structures were grown by MBE and the crystalline quality and the characteristics of intersubband transition in near infrared region were investigated. Although the layer consisted of as many as 200 wells, good periodicity was confirmed by cross-sectional TEM images and X-ray diffraction. Analysis of the absorption spectra indicated that the wells fluctuated in thickness by 2 monolayers (MLs) and the interfaces gradated by 2-3 MLs. Absorptions were sufficiently large for realizing devices. The saturation intensity was as small as 0.5 pJ/μm^2 this indicated that the devices would be available for practical use. More over, waveguide structures were fabricated and the intersubband absorptions were successfully observed. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN / Quantum well / Intersubband transition / MBE |
| Paper # | LQE2002-76 |
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| Conference Information | |
| Committee | LQE |
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| Conference Date | 2002/6/8(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
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| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Growth of GaN/AlN Quantum Wells and Characteristics of Intersubband Transition |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | Quantum well |
| Keyword(3) | Intersubband transition |
| Keyword(4) | MBE |
| 1st Author's Name | Norio IIZUKA |
| 1st Author's Affiliation | Corporate R & D Center, Toshiba Corp.() |
| 2nd Author's Name | Kei KANEKO |
| 2nd Author's Affiliation | Corporate R & D Center, Toshiba Corp. |
| 3rd Author's Name | Nobuo SUZUKI |
| 3rd Author's Affiliation | Corporate R & D Center, Toshiba Corp. |
| Date | 2002/6/8 |
| Paper # | LQE2002-76 |
| Volume (vol) | vol.102 |
| Number (no) | 119 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |