Presentation 2002/6/8
Application of Hydrogenated Polycrystalline Gallium Nitride to UV Photodiodes and Light Emitting Devices
Shigeru Yagi,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) Poly-crystalline III - V nitrides have been investigated to extend the applications in large-area and low-cost opto-electronic devices. For the purpose, hydrogenated nitrides are grown at lower temperature than 400℃ on various substrates such as glasses, transparent conductive oxides, metals and silicon by remote-plasma metalorganic chemical vapor deposition. Among various devices, indium-tin-oxides coated glass/Mg-doped hydrogenated polycrystalline GaN( poly-GaN:H ) /Au devices reveal excellent photoelectrical properties comparable to single crystalline GaN photodiodes. We have successfully developed UV photodiodes composed of the polycrystalline GaN for the first time and developed and put the portable UV meters with the photodiodes to the market. The feasibility of large area light emitting device using poly-GaN:H are discussed.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Hydrogenated polychrystalline compond semiconductor / GaN / UV photodiode / LED
Paper # LQE2002-75
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Conference Information
Committee LQE
Conference Date 2002/6/8(1days)
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Paper Information
Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Application of Hydrogenated Polycrystalline Gallium Nitride to UV Photodiodes and Light Emitting Devices
Sub Title (in English)
Keyword(1) Hydrogenated polychrystalline compond semiconductor
Keyword(2) GaN
Keyword(3) UV photodiode
Keyword(4) LED
1st Author's Name Shigeru Yagi
1st Author's Affiliation New business Center, Fuji Xerox Co., Ltd.()
Date 2002/6/8
Paper # LQE2002-75
Volume (vol) vol.102
Number (no) 119
Page pp.pp.-
#Pages 4
Date of Issue