Presentation 2002/6/8
Fabrication and characterization of AlGaN-Based Resonant Cavity-Enhanced Ultraviolet Photodetectors
Masao YONEMARU, Akihiko KIKUCHI, Katsumi KISHINO,
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Abstract(in English) Resonant cavity-enhanced (RCE) photodetector (PD) is achieved a high responsivity and excellent wavelength selectivity for a thin absorption layer. In this investigation, we have fabricated AlGaN-based RCE ultraviolet (UV) PD by rf-plasma-assisted molecular beam epitaxy (RF-MBE). We have successfully improved the responsivity of RCE-UV-PD by grown on sapphire substrate without metalorganic chemical vapor deposition (MOCVD)-GaN template. Dark current was 66pA at 5V bias voltage. We observed clear resonant detection peaks by resonant cavity effect. Peak responsivities were 1.5A/W at 357nm and 1.2A/W at 364nm with 9V bias voltage, for a thin absorption layer of 40nm.
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Keyword(in English) resonant cavity-enhanced photodetector / ultraviolet-ray / photoconductor / GaN / AlN
Paper # LQE2002-73
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Committee LQE
Conference Date 2002/6/8(1days)
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Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Fabrication and characterization of AlGaN-Based Resonant Cavity-Enhanced Ultraviolet Photodetectors
Sub Title (in English)
Keyword(1) resonant cavity-enhanced photodetector
Keyword(2) ultraviolet-ray
Keyword(3) photoconductor
Keyword(4) GaN
Keyword(5) AlN
1st Author's Name Masao YONEMARU
1st Author's Affiliation Department of Electrical and Electronics Engineering, Sophia University()
2nd Author's Name Akihiko KIKUCHI
2nd Author's Affiliation Department of Electrical and Electronics Engineering, Sophia University
3rd Author's Name Katsumi KISHINO
3rd Author's Affiliation Department of Electrical and Electronics Engineering, Sophia University
Date 2002/6/8
Paper # LQE2002-73
Volume (vol) vol.102
Number (no) 119
Page pp.pp.-
#Pages 4
Date of Issue