| Presentation | 2002/6/8 Electron emission from polycrystalline GaN on metal substrate T. Yamanaka, H. Tampo, M. Hashimoto, H. Asahi, |
|---|---|
| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Polycrystalline GaN layers are grown on polycrystalline Mo substrate by ECR-MBE. They have 300-600nm-size grain structures and tip-like structures. GaN/Mo interface shows ohmic I-V characteristics. Field emission (FE) measurement shows a turn-on electric field of as low as 10.6 V/μm at an emission current of 1 nA. We obtained a field emission current density of 260 μA/cm^2 at the electric field of 22 V/μm. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | polycrystalline GaN / Mo metal substrate / field emission / molecular beam epitaxy / threshold electric field |
| Paper # | LQE2002-72 |
| Date of Issue |
| Conference Information | |
| Committee | LQE |
|---|---|
| Conference Date | 2002/6/8(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Electron emission from polycrystalline GaN on metal substrate |
| Sub Title (in English) | |
| Keyword(1) | polycrystalline GaN |
| Keyword(2) | Mo metal substrate |
| Keyword(3) | field emission |
| Keyword(4) | molecular beam epitaxy |
| Keyword(5) | threshold electric field |
| 1st Author's Name | T. Yamanaka |
| 1st Author's Affiliation | The Institute of Scientific and Industrial, Osaka University() |
| 2nd Author's Name | H. Tampo |
| 2nd Author's Affiliation | The Institute of Scientific and Industrial, Osaka University |
| 3rd Author's Name | M. Hashimoto |
| 3rd Author's Affiliation | The Institute of Scientific and Industrial, Osaka University |
| 4th Author's Name | H. Asahi |
| 4th Author's Affiliation | The Institute of Scientific and Industrial, Osaka University |
| Date | 2002/6/8 |
| Paper # | LQE2002-72 |
| Volume (vol) | vol.102 |
| Number (no) | 119 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |