Presentation 2002/6/8
Formation of GaN self-organized nanotips and its field emission
Yuusuke Terada, Tatsuhiro Urushido, Harumasa Yoshida, Hideto Miyake, Kazumasa Hiramatu,
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Abstract(in English) Formation of GaN self-organized nanotips by using reactive ion etching (RIE) and its field emission were characterized. The nanotips fabricated on the GaN substrate grown by epitaxial lateral overgrowth (ELO) were uniformly on the GaN layer, which reveals that nanotips are not dependent on threading dislocations. It was found that the height of the nanotips increases by increasing etching time. In etching time of 4 min, the height of the nanotips was about 1μm. Microscopic current I_FC by field emission from the nanotips was 0.2μA(73mA/cm^2) on applied voltage of 1500 V. The stability current of 12 nA was observed at an applied voltage 1200 V for 1 hour. It confirmed that the application for cold cathode field emitter for GaN nanotips is promise.
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Keyword(in English) GaN / RIE / Cl_2 plasma / nanotips / field emission
Paper # LQE2002-71
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Committee LQE
Conference Date 2002/6/8(1days)
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Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Formation of GaN self-organized nanotips and its field emission
Sub Title (in English)
Keyword(1) GaN
Keyword(2) RIE
Keyword(3) Cl_2 plasma
Keyword(4) nanotips
Keyword(5) field emission
1st Author's Name Yuusuke Terada
1st Author's Affiliation Mie University()
2nd Author's Name Tatsuhiro Urushido
2nd Author's Affiliation Mie University
3rd Author's Name Harumasa Yoshida
3rd Author's Affiliation Mie University
4th Author's Name Hideto Miyake
4th Author's Affiliation Mie University
5th Author's Name Kazumasa Hiramatu
5th Author's Affiliation Mie University
Date 2002/6/8
Paper # LQE2002-71
Volume (vol) vol.102
Number (no) 119
Page pp.pp.-
#Pages 4
Date of Issue