Presentation | 2002/6/7 AlGaN/GaN power HFET for a large current operation Seikoh YOSHIDA, Hirotatsu ISHII, Jiang LI, Delian WANG, Masakazu ICHIKAWA, |
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PDF Download Page | PDF download Page Link |
Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | An AlGaN/GaN heterojunction field-effect transistor (HFET) was fabricated for a large current operation. In order to realize a very low contact resistance, contact layers for a source and drain were formed by a gas-source molecular beam epitaxy (GSMBE). As a result, the FET was operated at 20 A and the breakdown voltage was improved to 300 V. The on-state resistance of FET was about 10 mΩ cm^2 and its value was lower compared with that of Si MOSFET. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | GaN / AlGaN / HFET / MBE / on-state resistance |
Paper # | LQE2002-63 |
Date of Issue |
Conference Information | |
Committee | LQE |
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Conference Date | 2002/6/7(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
Topics (in English) | |
Chair | |
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Paper Information | |
Registration To | Lasers and Quantum Electronics (LQE) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | AlGaN/GaN power HFET for a large current operation |
Sub Title (in English) | |
Keyword(1) | GaN |
Keyword(2) | AlGaN |
Keyword(3) | HFET |
Keyword(4) | MBE |
Keyword(5) | on-state resistance |
1st Author's Name | Seikoh YOSHIDA |
1st Author's Affiliation | Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd.() |
2nd Author's Name | Hirotatsu ISHII |
2nd Author's Affiliation | Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd. |
3rd Author's Name | Jiang LI |
3rd Author's Affiliation | Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd. |
4th Author's Name | Delian WANG |
4th Author's Affiliation | JRCAT |
5th Author's Name | Masakazu ICHIKAWA |
5th Author's Affiliation | JRCAT |
Date | 2002/6/7 |
Paper # | LQE2002-63 |
Volume (vol) | vol.102 |
Number (no) | 118 |
Page | pp.pp.- |
#Pages | 4 |
Date of Issue |