Presentation 2002/6/7
AlGaN/GaN power HFET for a large current operation
Seikoh YOSHIDA, Hirotatsu ISHII, Jiang LI, Delian WANG, Masakazu ICHIKAWA,
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Abstract(in English) An AlGaN/GaN heterojunction field-effect transistor (HFET) was fabricated for a large current operation. In order to realize a very low contact resistance, contact layers for a source and drain were formed by a gas-source molecular beam epitaxy (GSMBE). As a result, the FET was operated at 20 A and the breakdown voltage was improved to 300 V. The on-state resistance of FET was about 10 mΩ cm^2 and its value was lower compared with that of Si MOSFET.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) GaN / AlGaN / HFET / MBE / on-state resistance
Paper # LQE2002-63
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Committee LQE
Conference Date 2002/6/7(1days)
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Paper Information
Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) AlGaN/GaN power HFET for a large current operation
Sub Title (in English)
Keyword(1) GaN
Keyword(2) AlGaN
Keyword(3) HFET
Keyword(4) MBE
Keyword(5) on-state resistance
1st Author's Name Seikoh YOSHIDA
1st Author's Affiliation Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd.()
2nd Author's Name Hirotatsu ISHII
2nd Author's Affiliation Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd.
3rd Author's Name Jiang LI
3rd Author's Affiliation Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd.
4th Author's Name Delian WANG
4th Author's Affiliation JRCAT
5th Author's Name Masakazu ICHIKAWA
5th Author's Affiliation JRCAT
Date 2002/6/7
Paper # LQE2002-63
Volume (vol) vol.102
Number (no) 118
Page pp.pp.-
#Pages 4
Date of Issue