| Presentation | 2002/6/7 Characterization of GaN and AlGaN Surfaces and Their Insulated Gate Structures Tamotsu Hashizume, Shinya Ootomo, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | A combination of a wet chemical process in NH_4OH solution and a ECR-N_2 plasma treatment was found to be effective in reducing the surface band bending on GaN surfaces. A nitrogen-vacancy-related surface state was introduced near Ec-0.5 eV on the GaN surfaces exposed to H_2 plasma. A SiN_x/GaN structure prepared by ECR-CVD process showed good interface properties with low interface state densities. An ultrathin (below 4nm) AlO_X layer was successfully fabricated on the AlGaN surface and applied to insulated-gate type GaN/AlGaN heterostructure filed-effect transistors (IG-HEET). |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN / AlGaN / surface / interface / insulated gate / HFET |
| Paper # | LQE2002-62 |
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| Conference Information | |
| Committee | LQE |
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| Conference Date | 2002/6/7(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Characterization of GaN and AlGaN Surfaces and Their Insulated Gate Structures |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | AlGaN |
| Keyword(3) | surface |
| Keyword(4) | interface |
| Keyword(5) | insulated gate |
| Keyword(6) | HFET |
| 1st Author's Name | Tamotsu Hashizume |
| 1st Author's Affiliation | Research Center for Integrated Quantum Electronics, Hokkaido University() |
| 2nd Author's Name | Shinya Ootomo |
| 2nd Author's Affiliation | School of Electronics and Information Engineering, Hokkaido University |
| Date | 2002/6/7 |
| Paper # | LQE2002-62 |
| Volume (vol) | vol.102 |
| Number (no) | 118 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |