Presentation 2002/6/7
Temperature Dependence of High-Frequency Performances of AlGaN/GaN HEMTs
Takashi MIZUTANI, Mitsutoshi AKITA, Yutaka OHNO, Shigeru KISHIMOTO, Koichi MAEZAWA,
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Abstract(in English) High-frequency measurements of the 1.3-μm-long gate AlGaN/GaN HEMTs have been performed at temperatures between 23℃ and 187℃. The cutoff frequency f_γ decreased monotonically with increasing temperature. It was 13.7 and 8.7 GHz at 23 and 187℃, respectively. The effective electron velocities v_eff in the channel evaluated from the total delay time versus I_D-inverse relation were 1.2 and 0.8 × 10^7cm/s at 23 and 187℃, respectively. It has been shown that the the present device is in an intermediate state between mobility-dominant and peak-velocity-dominant operations.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) AlGaN/GaN HEMT / Temperature Dependence / High-Frequency Performance / Effective Electron Velcity
Paper # LQE2002-60
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Committee LQE
Conference Date 2002/6/7(1days)
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Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Temperature Dependence of High-Frequency Performances of AlGaN/GaN HEMTs
Sub Title (in English)
Keyword(1) AlGaN/GaN HEMT
Keyword(2) Temperature Dependence
Keyword(3) High-Frequency Performance
Keyword(4) Effective Electron Velcity
1st Author's Name Takashi MIZUTANI
1st Author's Affiliation Quantum Engineering, Graduate School of Enfineering, Nagoya University()
2nd Author's Name Mitsutoshi AKITA
2nd Author's Affiliation Quantum Engineering, Graduate School of Enfineering, Nagoya University
3rd Author's Name Yutaka OHNO
3rd Author's Affiliation Quantum Engineering, Graduate School of Enfineering, Nagoya University
4th Author's Name Shigeru KISHIMOTO
4th Author's Affiliation Quantum Engineering, Graduate School of Enfineering, Nagoya University
5th Author's Name Koichi MAEZAWA
5th Author's Affiliation Quantum Engineering, Graduate School of Enfineering, Nagoya University
Date 2002/6/7
Paper # LQE2002-60
Volume (vol) vol.102
Number (no) 118
Page pp.pp.-
#Pages 4
Date of Issue