| 講演名 | 2002/6/7 Structural Disorder and Optical Property of InGaAsN Alloy Semiconductor , |
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| 抄録(英) | The 250-500 nm-thick LnGaAsN (In = 17.0%, N= 0-2.3%) alloy films were grown on GaAs(001) substrates by metalorganic vapor phase epitaxy (MOVPE) at 600℃ with dimethylhydrazine as the N precursor. Low-temperature (11K) and room temperature photoluminescence (PL) spectra showed a continuous red-shift with increasing N content (0-2.3%). The temperature dependence of the PL spectra is excellent with a near-band-edge emission peak for low N contents (<2.3%). Additionally, the carrier/exciton localization induced by alloy disorders in the microscopic structure was observed. On the other hand, the film with high N content (2.3%) showed that the dominant spectra contain several broad PL bands of unknown origin, in addition to the InGaAsN-related emission. The different luminescence emissions, which corresponded the In- and N-related localization, from the different regions of the In_0.17Ga_0 .83As_0.977N_0.023 alloy film were also observed. Furthermore, from transmission electron microscope images, the nearly defecting free InGaAsN layer was obtained for the films with low N content (1.0%). In contrast, for the films with higher N content (2.3%), the formation of structural defects was clearly observed. Our results suggest that the compositional fluctuation of both In and N, which is responsible for the formation of structural defects as well as for the carrier/exciton localization, increases with increasing N concentration. |
| キーワード(和) | |
| キーワード(英) | Compositional fluctuation / Photoluminescence / Carrier localization / Metalorganic vapor phase epitaxy / InGaAsN alloy / Structural disorder |
| 資料番号 | LQE2002-49 |
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| 研究会情報 | |
| 研究会 | LQE |
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| 開催期間 | 2002/6/7(から1日開催) |
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| 申込み研究会 | Lasers and Quantum Electronics (LQE) |
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| 本文の言語 | ENG |
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| サブタイトル（和） | |
| タイトル（英） | Structural Disorder and Optical Property of InGaAsN Alloy Semiconductor |
| サブタイトル（和） | |
| キーワード(1)（和/英） | / Compositional fluctuation |
| 第 1 著者 氏名（和/英） | / Sakuntam SANORPIM |
| 第 1 著者 所属（和/英） | Department of Advanced Materials Science, The University of Tokyo:Department of Applied Physics, The University of Tokyo |
| 発表年月日 | 2002/6/7 |
| 資料番号 | LQE2002-49 |
| 巻番号（vol） | vol.102 |
| 号番号（no） | 118 |
| ページ範囲 | pp.- |
| ページ数 | 4 |
| 発行日 | |