Presentation 2002/6/6
Optical Properties of Single Crystalline InN Grown by RF-MBE
Yoshiki SAITO, Masaki HORI, Tomohiro YAMAGUCHI, Nobuaki TERAGUCHI, Akira SUZUKI, Tsutomu ARAKI, Yasushi NANISHI,
PDF Download Page PDF download Page Link
Abstract(in Japanese) (See Japanese page)
Abstract(in English) InN was grown on a (0001) sapphire by RF-MBE. The results of RHEED observations and XRD measurements confirmed that single crystalline InN with wurtzite structure was grown. The band-gap of InN was estimated at around 0.78 eV by optical absorption measurements at room temperature. Strong PL emission was obtained near the band-edge estimated by optical absorption measurements. InGaN films grown by RF-MBE were also studied. PL peak positions for various indium compositions showed a good agreement with the curve calculated by using a bowing parameter of 2.3 eV and InN band-gap of 0.8 eV. These results suggest that fundamental band-gap of InN is around 0.8 eV.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) RF-MBE / InN / band-gap / single crystalline / PL / InGaN
Paper # LQE2002-41
Date of Issue

Conference Information
Committee LQE
Conference Date 2002/6/6(1days)
Place (in Japanese) (See Japanese page)
Place (in English)
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair
Vice Chair
Secretary
Assistant

Paper Information
Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Optical Properties of Single Crystalline InN Grown by RF-MBE
Sub Title (in English)
Keyword(1) RF-MBE
Keyword(2) InN
Keyword(3) band-gap
Keyword(4) single crystalline
Keyword(5) PL
Keyword(6) InGaN
1st Author's Name Yoshiki SAITO
1st Author's Affiliation Faculty of Science and Engineering, Ritsumeikan University()
2nd Author's Name Masaki HORI
2nd Author's Affiliation Faculty of Science and Engineering, Ritsumeikan University
3rd Author's Name Tomohiro YAMAGUCHI
3rd Author's Affiliation Faculty of Science and Engineering, Ritsumeikan University
4th Author's Name Nobuaki TERAGUCHI
4th Author's Affiliation Advanced Technology Research Lab., Sharp Corporation
5th Author's Name Akira SUZUKI
5th Author's Affiliation Advanced Technology Research Lab., Sharp Corporation
6th Author's Name Tsutomu ARAKI
6th Author's Affiliation Faculty of Science and Engineering, Ritsumeikan University
7th Author's Name Yasushi NANISHI
7th Author's Affiliation Faculty of Science and Engineering, Ritsumeikan University
Date 2002/6/6
Paper # LQE2002-41
Volume (vol) vol.102
Number (no) 117
Page pp.pp.-
#Pages 4
Date of Issue