Presentation | 2002/6/6 Optical Properties of Single Crystalline InN Grown by RF-MBE Yoshiki SAITO, Masaki HORI, Tomohiro YAMAGUCHI, Nobuaki TERAGUCHI, Akira SUZUKI, Tsutomu ARAKI, Yasushi NANISHI, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | InN was grown on a (0001) sapphire by RF-MBE. The results of RHEED observations and XRD measurements confirmed that single crystalline InN with wurtzite structure was grown. The band-gap of InN was estimated at around 0.78 eV by optical absorption measurements at room temperature. Strong PL emission was obtained near the band-edge estimated by optical absorption measurements. InGaN films grown by RF-MBE were also studied. PL peak positions for various indium compositions showed a good agreement with the curve calculated by using a bowing parameter of 2.3 eV and InN band-gap of 0.8 eV. These results suggest that fundamental band-gap of InN is around 0.8 eV. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | RF-MBE / InN / band-gap / single crystalline / PL / InGaN |
Paper # | LQE2002-41 |
Date of Issue |
Conference Information | |
Committee | LQE |
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Conference Date | 2002/6/6(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Lasers and Quantum Electronics (LQE) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Optical Properties of Single Crystalline InN Grown by RF-MBE |
Sub Title (in English) | |
Keyword(1) | RF-MBE |
Keyword(2) | InN |
Keyword(3) | band-gap |
Keyword(4) | single crystalline |
Keyword(5) | PL |
Keyword(6) | InGaN |
1st Author's Name | Yoshiki SAITO |
1st Author's Affiliation | Faculty of Science and Engineering, Ritsumeikan University() |
2nd Author's Name | Masaki HORI |
2nd Author's Affiliation | Faculty of Science and Engineering, Ritsumeikan University |
3rd Author's Name | Tomohiro YAMAGUCHI |
3rd Author's Affiliation | Faculty of Science and Engineering, Ritsumeikan University |
4th Author's Name | Nobuaki TERAGUCHI |
4th Author's Affiliation | Advanced Technology Research Lab., Sharp Corporation |
5th Author's Name | Akira SUZUKI |
5th Author's Affiliation | Advanced Technology Research Lab., Sharp Corporation |
6th Author's Name | Tsutomu ARAKI |
6th Author's Affiliation | Faculty of Science and Engineering, Ritsumeikan University |
7th Author's Name | Yasushi NANISHI |
7th Author's Affiliation | Faculty of Science and Engineering, Ritsumeikan University |
Date | 2002/6/6 |
Paper # | LQE2002-41 |
Volume (vol) | vol.102 |
Number (no) | 117 |
Page | pp.pp.- |
#Pages | 4 |
Date of Issue |