Presentation 2002/6/6
The growth of cubic GaN film on GaAs (100) using AlN/GaN ordered alloy by MBE : The new approach of high quality cubic GaN
A. SHIGEMORI, J. SHIKE, R. KIMURA, K. ISHIDA, K. TAKAHASHI,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) Cubic GaN films on GaAs (100) were successfully grown using a newly introduced AlN/GaN ordered alloy (OA) and plasma-assisted moleculer beam epitaxy. Dominant cubic GaN growth was confirmed by in-situ RHEED observation, photoluminescence (14K) and X-ray diffraction measurements and AFM diffraction measurements.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) GaN / cubic crystal / RF-MBE / ordered alloy
Paper # LQE2002-37
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Conference Information
Committee LQE
Conference Date 2002/6/6(1days)
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Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) The growth of cubic GaN film on GaAs (100) using AlN/GaN ordered alloy by MBE : The new approach of high quality cubic GaN
Sub Title (in English)
Keyword(1) GaN
Keyword(2) cubic crystal
Keyword(3) RF-MBE
Keyword(4) ordered alloy
1st Author's Name A. SHIGEMORI
1st Author's Affiliation Department of Science and Engineering, Teikyo university of Science and Technology()
2nd Author's Name J. SHIKE
2nd Author's Affiliation Department of Science and Engineering, Teikyo university of Science and Technology
3rd Author's Name R. KIMURA
3rd Author's Affiliation Department of Science and Engineering, Teikyo university of Science and Technology
4th Author's Name K. ISHIDA
4th Author's Affiliation Department of Science and Engineering, Teikyo university of Science and Technology
5th Author's Name K. TAKAHASHI
5th Author's Affiliation Department of Science and Engineering, Teikyo university of Science and Technology
Date 2002/6/6
Paper # LQE2002-37
Volume (vol) vol.102
Number (no) 117
Page pp.pp.-
#Pages 4
Date of Issue