| Presentation | 2002/6/6 Growth and Optical Properties of GaAsN Alloys Grown by RF-MBE Atsushi NISHIKAWA, Ryuji KATAYAMA, Kentaro ONABE, Yasuhiro SHIRAKI, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Due to the optimization of the growth conditions of GaAsN alloys for higher N contents, GaAsN alloys with N contents up to 4.5 % were successfully grown by RF-MBE. The band gap energies were investigated by photoreflectance spectroscopy. In the low (<1%) content region, the bowing parameter is estimated as 22 eV by fitting to a quadratic curve. However the deviation of the experimental data from the fitting curve becomes large as N content increases. With the N content of 4.5 %, the band gap energy of GaAsN is observed as low as 1.33 μm (0.93 eV). |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaAsN alloys / RF-MBE / Band gap energy / Photoreflectance |
| Paper # | LQE2002-36 |
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| Conference Information | |
| Committee | LQE |
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| Conference Date | 2002/6/6(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Growth and Optical Properties of GaAsN Alloys Grown by RF-MBE |
| Sub Title (in English) | |
| Keyword(1) | GaAsN alloys |
| Keyword(2) | RF-MBE |
| Keyword(3) | Band gap energy |
| Keyword(4) | Photoreflectance |
| 1st Author's Name | Atsushi NISHIKAWA |
| 1st Author's Affiliation | Faculty of Advanced Materials Science, Univ. of Tokyo() |
| 2nd Author's Name | Ryuji KATAYAMA |
| 2nd Author's Affiliation | Faculty of Advanced Materials Science, Univ. of Tokyo |
| 3rd Author's Name | Kentaro ONABE |
| 3rd Author's Affiliation | Faculty of Advanced Materials Science, Univ. of Tokyo |
| 4th Author's Name | Yasuhiro SHIRAKI |
| 4th Author's Affiliation | Dept. of Applied Physics, Univ. of Tokyo |
| Date | 2002/6/6 |
| Paper # | LQE2002-36 |
| Volume (vol) | vol.102 |
| Number (no) | 117 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |