Presentation | 2002/6/6 Fabrication of GaN Films by CS-MBE and Its Application to Light-Emitting Devices Tohru HONDA, Kenichi IGA, Hideo KAWANISHI, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Deposition of light-emitting layer on the glass substrates is required for the application to UV/Blue flat display panels based on GaN. In this paper, we propose GaN-based electroluminescent devises, whose emission layer is deposited at low temperature less than 550 ℃. The GaN films were deposited on the glass using compound source MBE. The photoluminescence spectra of deposited GaN films involved the UV light emission at room temperature. The GaN-based electroluminescent devices, whose emission layer was deposited at the substrate temperature of 450 ℃ show the bluish-white light emission under the AC voltage operation. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | GaN / MBE / Cathodoluminescence / Photoluminescence / UV Emission |
Paper # | LQE2002-35 |
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Committee | LQE |
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Conference Date | 2002/6/6(1days) |
Place (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Lasers and Quantum Electronics (LQE) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Fabrication of GaN Films by CS-MBE and Its Application to Light-Emitting Devices |
Sub Title (in English) | |
Keyword(1) | GaN |
Keyword(2) | MBE |
Keyword(3) | Cathodoluminescence |
Keyword(4) | Photoluminescence |
Keyword(5) | UV Emission |
1st Author's Name | Tohru HONDA |
1st Author's Affiliation | Dept. of Electronic Engineering, Kohgakuin University() |
2nd Author's Name | Kenichi IGA |
2nd Author's Affiliation | Dept. of Electronic Engineering, Kohgakuin University |
3rd Author's Name | Hideo KAWANISHI |
3rd Author's Affiliation | Dept. of Electronic Engineering, Kohgakuin University |
Date | 2002/6/6 |
Paper # | LQE2002-35 |
Volume (vol) | vol.102 |
Number (no) | 117 |
Page | pp.pp.- |
#Pages | 4 |
Date of Issue |