| Presentation | 2002/6/6 Control of n-type conduction for Si-doped AlN and AlGaN with high Al content Yoshitaka TANIYASU, Makoto KASU, Naoki KOBAYASHI, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have obtained n-type conductive Si-doped AlN and Al_xGa_1-xN with high Al content by intentionally controlling the Si dopant density, [Si]. The Si-doped AlN showed the n-type conduction when the [Si] was less than 3x10^19 cm^-3. When the [Si] was more than 3x10^19 cm^-3, it became highly resistive due to the self-compensation of Si donors. This indicates that the self-compensation plays an important role at higher [Si] and determines the upper doping limit of Si for AlGaN. For x > 0 49 the ionization energy of Si donor increased sharply with increasing Al content. This resulted in a sharp decrease in the highest obtainable electron concentration with increasing Al content for the Si-doped Al_xGa_1-xN. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | AlN / AlGaN / n-type conduction / doping / self-compensation |
| Paper # | LQE2002-34 |
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| Conference Information | |
| Committee | LQE |
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| Conference Date | 2002/6/6(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Control of n-type conduction for Si-doped AlN and AlGaN with high Al content |
| Sub Title (in English) | |
| Keyword(1) | AlN |
| Keyword(2) | AlGaN |
| Keyword(3) | n-type conduction |
| Keyword(4) | doping |
| Keyword(5) | self-compensation |
| 1st Author's Name | Yoshitaka TANIYASU |
| 1st Author's Affiliation | NTT Basic Research Laboratories, NIT Corporation() |
| 2nd Author's Name | Makoto KASU |
| 2nd Author's Affiliation | NTT Basic Research Laboratories, NIT Corporation |
| 3rd Author's Name | Naoki KOBAYASHI |
| 3rd Author's Affiliation | NTT Basic Research Laboratories, NIT Corporation |
| Date | 2002/6/6 |
| Paper # | LQE2002-34 |
| Volume (vol) | vol.102 |
| Number (no) | 117 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |