Presentation 2002/6/6
Influence of Ambient Hydrogen in InGaN multiple quantum well structure
Akinori Ubukata, Hiroki Tokunaga, Yoshiki Yano, Akira Yamaguchi, Toshiaki Yamazaki,
PDF Download Page PDF download Page Link
Abstract(in Japanese) (See Japanese page)
Abstract(in English) We have investigated a growth condition of InGaN/GaN multiple quantum well structure. The epitaxial layers were grown on sapphire using an atmospheric horizontal MOVPE system with a 6 inch diameter wafer platen. 'With ambient hydrogen rich as a carrier gas in the growth of GaN films, asymmetrical reflection profile of X-ray rocking curve became narrow. By applying same growth condition to the GaN barriers in InGaN/GaN multi quantum well (MQW) structure, room temperature photoluminescence intensity was improved approximately three times as that for InGaN/GaN MQW structures grown with only nitrogen carrier gas.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) InGaN / GaN / multi quantum well / MOVPE / multi wafer reactor
Paper # LQE2002-33
Date of Issue

Conference Information
Committee LQE
Conference Date 2002/6/6(1days)
Place (in Japanese) (See Japanese page)
Place (in English)
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair
Vice Chair
Secretary
Assistant

Paper Information
Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Influence of Ambient Hydrogen in InGaN multiple quantum well structure
Sub Title (in English)
Keyword(1) InGaN
Keyword(2) GaN
Keyword(3) multi quantum well
Keyword(4) MOVPE
Keyword(5) multi wafer reactor
1st Author's Name Akinori Ubukata
1st Author's Affiliation Compound Semiconductor Project, NIPPON SANSO Corporation()
2nd Author's Name Hiroki Tokunaga
2nd Author's Affiliation Compound Semiconductor Project, NIPPON SANSO Corporation
3rd Author's Name Yoshiki Yano
3rd Author's Affiliation Compound Semiconductor Project, NIPPON SANSO Corporation
4th Author's Name Akira Yamaguchi
4th Author's Affiliation Compound Semiconductor Project, NIPPON SANSO Corporation
5th Author's Name Toshiaki Yamazaki
5th Author's Affiliation Compound Semiconductor Project, NIPPON SANSO Corporation
Date 2002/6/6
Paper # LQE2002-33
Volume (vol) vol.102
Number (no) 117
Page pp.pp.-
#Pages 4
Date of Issue