Presentation 2002/6/6
Growth Pressure Dependence of the Crystallinity of MOCVD Grown GaN Thin Films
S-W. Kim, T. Shibata, T. Sugimoto, T. Yamada, K. Haga, T. Suzuki,
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Abstract(in English) We discussed the growth pressure dependence of the crystallinity of MOCVD grown GaN thin films between the growth pressure of lOOTorr and 300Torr. As a result, it was found that the lower the growth pressure was, the smaller the size of islands became and the higher the density of threading dislocation became at the same time, and vice versa. The surface resistivity also depended on the growth pressure, i.e. the surface resistivity of GaN thin film grown under lOOTorr was about five orders of magnitude higher than that grown under 300Torr.
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Keyword(in English) GaN / MOCVD / Growth pressure / Threading Dislocations / Surface Resistivity
Paper # LQE2002-31
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Committee LQE
Conference Date 2002/6/6(1days)
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Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Growth Pressure Dependence of the Crystallinity of MOCVD Grown GaN Thin Films
Sub Title (in English)
Keyword(1) GaN
Keyword(2) MOCVD
Keyword(3) Growth pressure
Keyword(4) Threading Dislocations
Keyword(5) Surface Resistivity
1st Author's Name S-W. Kim
1st Author's Affiliation Nippon Institute of Technology()
2nd Author's Name T. Shibata
2nd Author's Affiliation Nippon Institute of Technology
3rd Author's Name T. Sugimoto
3rd Author's Affiliation Nippon Institute of Technology
4th Author's Name T. Yamada
4th Author's Affiliation Nippon Institute of Technology:Chichibu Fuji Co., Ltd
5th Author's Name K. Haga
5th Author's Affiliation Nippon Institute of Technology:Chichibu Fuji Co., Ltd
6th Author's Name T. Suzuki
6th Author's Affiliation Nippon Institute of Technology
Date 2002/6/6
Paper # LQE2002-31
Volume (vol) vol.102
Number (no) 117
Page pp.pp.-
#Pages 4
Date of Issue