Presentation 2002/6/6
Growth and properties of AlInN, AlN and related structures
Shugo NITTA, Yasuhiro WATANABE, Yoshihito TOMIDA, Satoshi KAMIYAMA, Hiroshi AMANO, Isamu AKASAKI, Shigeo YAMAGUCHI, Yasuo IWAMURA,
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Abstract(in English) Crystalline and optical properties of high-quality Al_1-xIn_xN grown on GaN by metal organic vapor phase epitaxy was investigated. Al_0.83In_0.17N which is lattice-matched to GaN has minimum mosaic components, i.e. tilting and twisting. Mismatched Al_1-xIn_xN has larger mosaicity. Photoluminescence spectra peaked in wide wavelength range was observed. Using nitrogen as a carrier gas, high-quality AlN was grown on GaN. Crystalline and electrical properties of Al_0.09In_0.10N/GaN and AlN/GaN supperlattices were measured. For 5 pairs of Al_0.90In_0.10N/GaN SLs, Hall measurement at RT showed an electron mobility of 946cm^2/Vs (a sheet carrier density of 2.9 × 10^12cm^-2). For 10 pairs of AlN/GaN SLs, Hall measurement at RT showed an electron mobility of 2610cm^2/Vs (a sheet carrier density of 3.38 × 10^12cm^-2).
Keyword(in Japanese) (See Japanese page)
Keyword(in English) AlN / AlInN / strain / stress / superlattices / high-mobility
Paper # LQE2002-30
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Committee LQE
Conference Date 2002/6/6(1days)
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Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Growth and properties of AlInN, AlN and related structures
Sub Title (in English)
Keyword(1) AlN
Keyword(2) AlInN
Keyword(3) strain
Keyword(4) stress
Keyword(5) superlattices
Keyword(6) high-mobility
1st Author's Name Shugo NITTA
1st Author's Affiliation Faculty of Science and Technology, Meijo University()
2nd Author's Name Yasuhiro WATANABE
2nd Author's Affiliation Faculty of Science and Technology, Meijo University
3rd Author's Name Yoshihito TOMIDA
3rd Author's Affiliation Faculty of Science and Technology, Meijo University
4th Author's Name Satoshi KAMIYAMA
4th Author's Affiliation Faculty of Science and Technology, Meijo University
5th Author's Name Hiroshi AMANO
5th Author's Affiliation Faculty of Science and Technology, Meijo University
6th Author's Name Isamu AKASAKI
6th Author's Affiliation Faculty of Science and Technology, Meijo University
7th Author's Name Shigeo YAMAGUCHI
7th Author's Affiliation Faculty of Engineering, Kanagawa University
8th Author's Name Yasuo IWAMURA
8th Author's Affiliation Faculty of Engineering, Kanagawa University
Date 2002/6/6
Paper # LQE2002-30
Volume (vol) vol.102
Number (no) 117
Page pp.pp.-
#Pages 4
Date of Issue