| Presentation | 2002/6/6 High Quality GaN Grown by Raised-Pressure HVPE Shinya BOHYAMA, Kenji YOSHIKAWA, Hiroyuki NAOI, Hideto MIYAKE, Kazumasa HIRAMATSU, Yasushi IYECHIKA, Takayosi MAEDA, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Reactor pressure is an important factor in HVPE growth process. HVPE of GaN has been performed at atmospheric pressure, the pressure effects has hardly been investigated. We investigated an effect of reactor pressure. For growth at 0.4 and 1 atm, several cracks are observed in the surface and the FWHM values in (0004) and (1010) X-ray rocking curves (XRCs) are larger than 350 arcsec. These values were broader than those of the underlying GaN layers. However, for growth at 1.2 atm, crack-free GaN films are obtained and the FWHMs in both (0004) and (1010) XRC are dramatically reduced to narrower than 190 arcsec. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN / Raised-Pressure HVPE |
| Paper # | LQE2002-29 |
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| Conference Information | |
| Committee | LQE |
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| Conference Date | 2002/6/6(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | High Quality GaN Grown by Raised-Pressure HVPE |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | Raised-Pressure HVPE |
| 1st Author's Name | Shinya BOHYAMA |
| 1st Author's Affiliation | Faculty of Engineering, Mie University() |
| 2nd Author's Name | Kenji YOSHIKAWA |
| 2nd Author's Affiliation | Faculty of Engineering, Mie University |
| 3rd Author's Name | Hiroyuki NAOI |
| 3rd Author's Affiliation | Satellite Venture Business Laboratory, Mie University |
| 4th Author's Name | Hideto MIYAKE |
| 4th Author's Affiliation | Faculty of Engineering, Mie University |
| 5th Author's Name | Kazumasa HIRAMATSU |
| 5th Author's Affiliation | Faculty of Engineering, Mie University |
| 6th Author's Name | Yasushi IYECHIKA |
| 6th Author's Affiliation | Tsukuba Research Laboratory, Sumitomo Chemical Co., Ltd. |
| 7th Author's Name | Takayosi MAEDA |
| 7th Author's Affiliation | Tsukuba Research Laboratory, Sumitomo Chemical Co., Ltd. |
| Date | 2002/6/6 |
| Paper # | LQE2002-29 |
| Volume (vol) | vol.102 |
| Number (no) | 117 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |