| Presentation | 2002/6/6 Epitaxial Growth of III-Nitrides with Low Dislocations H. Miyake, R. Takeuchi, K. Hiramatsu, H. Naoi, Y. Iyechika, T. Maeda, T. Riemann, F. Bertram, J. Christen, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Epitaxial lateral overgrowth(ELO)is a promising technique to obtain a high-quality epitaxial GaN layer with low threading dislocation(TD)density. We reported facet controlled ELO(FACELO)technique of GaN was a usefultechnique to reduce TD density and achieved TD density of the order of 10^6cm^-2 in 10 μm thick ELO. Thickness of the ELOlayer for obtaining flat surface is dependent on window and mask widths, but the most suitable widths of ELO window andmask are not clear. In this work, we investigated density and distribution of TDs in the FACELO GaN with different window and mask widthsand obtained GaN with TD density of the order of 10^5cm^-2 except in coalescence region. Effects of facet structure during theELO process on the crystalline and optical properties of GaN are discussed. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN / epitaxial lateral overgrowth(ELO) / threading dislocation / facet controlled ELO(FACELO) / CL |
| Paper # | LQE2002-28 |
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| Conference Information | |
| Committee | LQE |
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| Conference Date | 2002/6/6(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Epitaxial Growth of III-Nitrides with Low Dislocations |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | epitaxial lateral overgrowth(ELO) |
| Keyword(3) | threading dislocation |
| Keyword(4) | facet controlled ELO(FACELO) |
| Keyword(5) | CL |
| 1st Author's Name | H. Miyake |
| 1st Author's Affiliation | Dept. of Electrical and Electronic Engineering,Mie Univ.() |
| 2nd Author's Name | R. Takeuchi |
| 2nd Author's Affiliation | Dept. of Electrical and Electronic Engineering,Mie Univ. |
| 3rd Author's Name | K. Hiramatsu |
| 3rd Author's Affiliation | Dept. of Electrical and Electronic Engineering,Mie Univ. |
| 4th Author's Name | H. Naoi |
| 4th Author's Affiliation | Satellite Venture Business Laboratory,Mie Univ. |
| 5th Author's Name | Y. Iyechika |
| 5th Author's Affiliation | Tsukuba Research Laboratory,Sumitomo Chemical Co.,Ltd |
| 6th Author's Name | T. Maeda |
| 6th Author's Affiliation | Tsukuba Research Laboratory,Sumitomo Chemical Co.,Ltd |
| 7th Author's Name | T. Riemann |
| 7th Author's Affiliation | Institute of Experimental Physics,Otto-von-Guericke-University Magdeburg |
| 8th Author's Name | F. Bertram |
| 8th Author's Affiliation | Institute of Experimental Physics,Otto-von-Guericke-University Magdeburg |
| 9th Author's Name | J. Christen |
| 9th Author's Affiliation | Institute of Experimental Physics,Otto-von-Guericke-University Magdeburg |
| Date | 2002/6/6 |
| Paper # | LQE2002-28 |
| Volume (vol) | vol.102 |
| Number (no) | 117 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |