Presentation | 2002/6/6 Growth of InGaN based LED on AlN/Sapphire templates Hiroyoshi OHMURA, Hiroyasu ISHIKAWA, Takashi EGAWA, Takashi JIMBO, Kanji MASUI, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | High quality GaN with low dislocation density epilayers are important for the fabrication of GaN-based laser diodes (LDs) and UV light emitting diodes (LEDs). In this study, we have fabricated InGaN MQW LED on AlN/Sapphire templates by MOCVD. The dislocation density were as low as 5 × 10^7 3 × 10^8 cm^-2 for the LED grown on AlN/Sapphire templates. Moreover, much improved LED characteristics have been observed when compared with those of conventional-two-step-grown LEDs on sapphire. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | InGaN / LED / AlN / templates |
Paper # | LQE2002-27 |
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Conference Information | |
Committee | LQE |
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Conference Date | 2002/6/6(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Lasers and Quantum Electronics (LQE) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Growth of InGaN based LED on AlN/Sapphire templates |
Sub Title (in English) | |
Keyword(1) | InGaN |
Keyword(2) | LED |
Keyword(3) | AlN |
Keyword(4) | templates |
1st Author's Name | Hiroyoshi OHMURA |
1st Author's Affiliation | Department of Electrical and Computer Engineering, Nagoya Institute of Technology() |
2nd Author's Name | Hiroyasu ISHIKAWA |
2nd Author's Affiliation | Reserch Center for Micro-Structure Devices, Nagoya Institute of Technology |
3rd Author's Name | Takashi EGAWA |
3rd Author's Affiliation | Reserch Center for Micro-Structure Devices, Nagoya Institute of Technology |
4th Author's Name | Takashi JIMBO |
4th Author's Affiliation | Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology |
5th Author's Name | Kanji MASUI |
5th Author's Affiliation | Department of Electrical and Computer Engineering, Nagoya Institute of Technology |
Date | 2002/6/6 |
Paper # | LQE2002-27 |
Volume (vol) | vol.102 |
Number (no) | 117 |
Page | pp.pp.- |
#Pages | 4 |
Date of Issue |