Presentation 2002/6/6
Growth of InGaN based LED on AlN/Sapphire templates
Hiroyoshi OHMURA, Hiroyasu ISHIKAWA, Takashi EGAWA, Takashi JIMBO, Kanji MASUI,
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Abstract(in English) High quality GaN with low dislocation density epilayers are important for the fabrication of GaN-based laser diodes (LDs) and UV light emitting diodes (LEDs). In this study, we have fabricated InGaN MQW LED on AlN/Sapphire templates by MOCVD. The dislocation density were as low as 5 × 10^7 3 × 10^8 cm^-2 for the LED grown on AlN/Sapphire templates. Moreover, much improved LED characteristics have been observed when compared with those of conventional-two-step-grown LEDs on sapphire.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) InGaN / LED / AlN / templates
Paper # LQE2002-27
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Committee LQE
Conference Date 2002/6/6(1days)
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Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Growth of InGaN based LED on AlN/Sapphire templates
Sub Title (in English)
Keyword(1) InGaN
Keyword(2) LED
Keyword(3) AlN
Keyword(4) templates
1st Author's Name Hiroyoshi OHMURA
1st Author's Affiliation Department of Electrical and Computer Engineering, Nagoya Institute of Technology()
2nd Author's Name Hiroyasu ISHIKAWA
2nd Author's Affiliation Reserch Center for Micro-Structure Devices, Nagoya Institute of Technology
3rd Author's Name Takashi EGAWA
3rd Author's Affiliation Reserch Center for Micro-Structure Devices, Nagoya Institute of Technology
4th Author's Name Takashi JIMBO
4th Author's Affiliation Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology
5th Author's Name Kanji MASUI
5th Author's Affiliation Department of Electrical and Computer Engineering, Nagoya Institute of Technology
Date 2002/6/6
Paper # LQE2002-27
Volume (vol) vol.102
Number (no) 117
Page pp.pp.-
#Pages 4
Date of Issue