| Presentation | 2002/6/6 Growth of Hexagonal GaN on Si(111) by Using a porous GaN Interlayer Bablu K. GHOSH, Toru TANIKAWA, Akihiro HASHIMOTO, Akio YAMAMOTO, Yoshifumi ITO, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | In this paper we propose a new interlayer for the GaN epitaxial growth on Si to minimize residual stress in the grown film. High quality GaN epilayer was grown successfully on Si by using porous GaN interlayer converted from GaAs. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN / Si(111) / interlayer / GaAs / nitridation / porous GaN / residual stress |
| Paper # | LQE2002-26 |
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| Conference Information | |
| Committee | LQE |
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| Conference Date | 2002/6/6(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Growth of Hexagonal GaN on Si(111) by Using a porous GaN Interlayer |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | Si(111) |
| Keyword(3) | interlayer |
| Keyword(4) | GaAs |
| Keyword(5) | nitridation |
| Keyword(6) | porous GaN |
| Keyword(7) | residual stress |
| 1st Author's Name | Bablu K. GHOSH |
| 1st Author's Affiliation | Faculty of engineering, Fukui University() |
| 2nd Author's Name | Toru TANIKAWA |
| 2nd Author's Affiliation | Faculty of engineering, Fukui University |
| 3rd Author's Name | Akihiro HASHIMOTO |
| 3rd Author's Affiliation | Faculty of engineering, Fukui University |
| 4th Author's Name | Akio YAMAMOTO |
| 4th Author's Affiliation | Faculty of engineering, Fukui University |
| 5th Author's Name | Yoshifumi ITO |
| 5th Author's Affiliation | Wakasa-wan Energy Research Center |
| Date | 2002/6/6 |
| Paper # | LQE2002-26 |
| Volume (vol) | vol.102 |
| Number (no) | 117 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |