Presentation 2002/6/6
Selective MOVPE Growth and Optical Properties of a GaN/AlGaN Stripe Structure on (111)Si Substrate
Tetsuo NARITA, Tomonobu KATO, Yoshio HONDA, Masahito YAMAGUCHI, Nobuhiko SAWAKI,
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Abstract(in English) A trapezoidal stripe structure and GaN/AlGaN heterostructure were fabricated on a (111)Si substrate by selective area metalorganic vapor phaseepitaxy(SAG-MOVPE). The stripe was made of (1101) side facets and (0001) face at the top. The cathode luminescence spectra at 4.0K exhibited several DAP emission from the AlGaN alloy. It was shown that the optical spectra depend on the thickness of the film on the facets. This suggests that the strain at the heterointerface modifies the growth mode on the facet.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) GaN / GaN/AlGaN heterostructure / MOVPE / Selective area growth / Cathode luminescence(CL)
Paper # LQE2002-25
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Committee LQE
Conference Date 2002/6/6(1days)
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Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Selective MOVPE Growth and Optical Properties of a GaN/AlGaN Stripe Structure on (111)Si Substrate
Sub Title (in English)
Keyword(1) GaN
Keyword(2) GaN/AlGaN heterostructure
Keyword(3) MOVPE
Keyword(4) Selective area growth
Keyword(5) Cathode luminescence(CL)
1st Author's Name Tetsuo NARITA
1st Author's Affiliation Department of Electronics and Akasaki Research Center, Nagoya University()
2nd Author's Name Tomonobu KATO
2nd Author's Affiliation Department of Electronics and Akasaki Research Center, Nagoya University
3rd Author's Name Yoshio HONDA
3rd Author's Affiliation Department of Electronics and Akasaki Research Center, Nagoya University
4th Author's Name Masahito YAMAGUCHI
4th Author's Affiliation Department of Electronics and Akasaki Research Center, Nagoya University
5th Author's Name Nobuhiko SAWAKI
5th Author's Affiliation Department of Electronics and Akasaki Research Center, Nagoya University
Date 2002/6/6
Paper # LQE2002-25
Volume (vol) vol.102
Number (no) 117
Page pp.pp.-
#Pages 4
Date of Issue