Presentation | 2002/6/6 Growth of GaN/AlGaN pyramid arrays on a Si substrate by MOVPE Masayuki TORIKAI, Tomonobu KATO, Yoshio HONDA, Masahito YAMAGUCHI, Nobuhiko SAWAKI, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | MOVPE growth of a GaN/Al_xGa_1-xN hexagonal pyramid array was attempted on a (111)Si substrate. On a truncated GaN pyramidal structure, an Al_xGa_1-xN film was deposited. It was found that the Al composition is a strong function of the position on the facets. At the top of the pyramid, it was higher than that at the bottom. The phenomenon is attributed to the different diffusion coefficients of Al and Ga chemical species on the surface. In case of the AlN film, the CL spectrum at 4.2 K for the C-surface exhibited a strong peak 218nm. However, we found an array of pits of which structure reflecting the hexagonal structure of the facet. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | GaN / AlGaN / Si / MOVPE / selective area growth / field emitter |
Paper # | LQE2002-24 |
Date of Issue |
Conference Information | |
Committee | LQE |
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Conference Date | 2002/6/6(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
Topics (in English) | |
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Assistant |
Paper Information | |
Registration To | Lasers and Quantum Electronics (LQE) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Growth of GaN/AlGaN pyramid arrays on a Si substrate by MOVPE |
Sub Title (in English) | |
Keyword(1) | GaN |
Keyword(2) | AlGaN |
Keyword(3) | Si |
Keyword(4) | MOVPE |
Keyword(5) | selective area growth |
Keyword(6) | field emitter |
1st Author's Name | Masayuki TORIKAI |
1st Author's Affiliation | Nagoya University() |
2nd Author's Name | Tomonobu KATO |
2nd Author's Affiliation | Nagoya University |
3rd Author's Name | Yoshio HONDA |
3rd Author's Affiliation | Nagoya University |
4th Author's Name | Masahito YAMAGUCHI |
4th Author's Affiliation | Nagoya University |
5th Author's Name | Nobuhiko SAWAKI |
5th Author's Affiliation | Department of Electronics and Akasaki Research Center |
Date | 2002/6/6 |
Paper # | LQE2002-24 |
Volume (vol) | vol.102 |
Number (no) | 117 |
Page | pp.pp.- |
#Pages | 4 |
Date of Issue |