Presentation 2002/6/6
Growth of GaN/AlGaN pyramid arrays on a Si substrate by MOVPE
Masayuki TORIKAI, Tomonobu KATO, Yoshio HONDA, Masahito YAMAGUCHI, Nobuhiko SAWAKI,
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Abstract(in English) MOVPE growth of a GaN/Al_xGa_1-xN hexagonal pyramid array was attempted on a (111)Si substrate. On a truncated GaN pyramidal structure, an Al_xGa_1-xN film was deposited. It was found that the Al composition is a strong function of the position on the facets. At the top of the pyramid, it was higher than that at the bottom. The phenomenon is attributed to the different diffusion coefficients of Al and Ga chemical species on the surface. In case of the AlN film, the CL spectrum at 4.2 K for the C-surface exhibited a strong peak 218nm. However, we found an array of pits of which structure reflecting the hexagonal structure of the facet.
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Keyword(in English) GaN / AlGaN / Si / MOVPE / selective area growth / field emitter
Paper # LQE2002-24
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Committee LQE
Conference Date 2002/6/6(1days)
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Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Growth of GaN/AlGaN pyramid arrays on a Si substrate by MOVPE
Sub Title (in English)
Keyword(1) GaN
Keyword(2) AlGaN
Keyword(3) Si
Keyword(4) MOVPE
Keyword(5) selective area growth
Keyword(6) field emitter
1st Author's Name Masayuki TORIKAI
1st Author's Affiliation Nagoya University()
2nd Author's Name Tomonobu KATO
2nd Author's Affiliation Nagoya University
3rd Author's Name Yoshio HONDA
3rd Author's Affiliation Nagoya University
4th Author's Name Masahito YAMAGUCHI
4th Author's Affiliation Nagoya University
5th Author's Name Nobuhiko SAWAKI
5th Author's Affiliation Department of Electronics and Akasaki Research Center
Date 2002/6/6
Paper # LQE2002-24
Volume (vol) vol.102
Number (no) 117
Page pp.pp.-
#Pages 4
Date of Issue