| Presentation | 2002/6/6 Preparation of ZrB_2 single crystals and the substrates Shigeki OTANI, |
|---|---|
| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | ZrB_2 single crystals, 1.5 cm in diameter and 8 cm long, were prepared by the RF-heated floating zone method. The FWHM value was about 100 arcsec. The etch pit density was 10^6-10^7/cm^2. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | ZrB_2 / GaN / Substrate / Crystal growth |
| Paper # | LQE2002-23 |
| Date of Issue |
| Conference Information | |
| Committee | LQE |
|---|---|
| Conference Date | 2002/6/6(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Preparation of ZrB_2 single crystals and the substrates |
| Sub Title (in English) | |
| Keyword(1) | ZrB_2 |
| Keyword(2) | GaN |
| Keyword(3) | Substrate |
| Keyword(4) | Crystal growth |
| 1st Author's Name | Shigeki OTANI |
| 1st Author's Affiliation | National Institute for Materials Science, Advanced Materials Laboratory() |
| Date | 2002/6/6 |
| Paper # | LQE2002-23 |
| Volume (vol) | vol.102 |
| Number (no) | 117 |
| Page | pp.pp.- |
| #Pages | 3 |
| Date of Issue | |