| Presentation | 2002/6/6 Formation of bulk gallium nitride (GaN) using a multi-cusp plasma-sputter ion source system Randolph FLAUTA, Toshiro KASUYA, Tadashi OHACHI, Motoi WADA, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | A multi-cusp plasma-sputter ion source system was used in the formation of bulk GaN crystals. By reaction of excited nitrogen species in a plasma with liquid Ga, polycrystalline and textured GaN crystals were formed. At a neutral nitrogen pressure of 0.3 Pa, the electron density and electron temperature of the plasma discharge ranged from 7.0 × 10^10 to 1.4 × 10^11 /cm^3 and 1.5 to 2.0 eV, respectively. The formed GaN appeared rough on the top and bottom surfaces but showed some shiny and well faceted appearance in the inner part of the bulk crystal when cleaved. X-ray diffraction peaks confirmed the irradiated materials to be fine crystalline GaN with distinct primary reflection corresponding to (002) plane of GaN which indicated good texturing of the crystals formed. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Gallium nitride / plasma sputtering / X-ray diffraction |
| Paper # | LQE2002-22 |
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| Conference Information | |
| Committee | LQE |
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| Conference Date | 2002/6/6(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Formation of bulk gallium nitride (GaN) using a multi-cusp plasma-sputter ion source system |
| Sub Title (in English) | |
| Keyword(1) | Gallium nitride |
| Keyword(2) | plasma sputtering |
| Keyword(3) | X-ray diffraction |
| 1st Author's Name | Randolph FLAUTA |
| 1st Author's Affiliation | Department of Electronics, Doshisha University() |
| 2nd Author's Name | Toshiro KASUYA |
| 2nd Author's Affiliation | Department of Electronics, Doshisha University |
| 3rd Author's Name | Tadashi OHACHI |
| 3rd Author's Affiliation | Department of Electronics, Doshisha University |
| 4th Author's Name | Motoi WADA |
| 4th Author's Affiliation | Department of Electronics, Doshisha University |
| Date | 2002/6/6 |
| Paper # | LQE2002-22 |
| Volume (vol) | vol.102 |
| Number (no) | 117 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |