| Presentation | 2002/6/6 Epitaxial Growth of GaN on NGO Substrates by HVPE Method : Development of GaN substrates for Fabrication of Laser Diodes Masashi NAKAMURA, Shinichi SASAKI, Eiichi SIMIZU, Tadaaki ASAHI, Kenji SATO, Ryota TANAKA, Hitoshi IMAI, Akihiro WAKAHARA, Akira YOSIDA, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The significant progress in the technology of III-N laser diodes has been done by using various epitaxial technologies. The reduction of defects in epitaxial layers improves the performance of III-N laser diodes. Growth of III-N layers on GaN substrates is effective to reduce the defects. So high quality GaN substrates are highly required. In the present work, thick free-standing GaN epitaxial films were grown on nearly lattice matched NdGaO_3 (NGO) substrates for GaN by HVPE method. The growth condition was optimized. The films were evaluated by XRC, PL, CL. The minimum XRC FWHM value of 180arcsec was obtained. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN / Free-standing substrates / HVPE / NGO |
| Paper # | LQE2002-20 |
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| Conference Information | |
| Committee | LQE |
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| Conference Date | 2002/6/6(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Epitaxial Growth of GaN on NGO Substrates by HVPE Method : Development of GaN substrates for Fabrication of Laser Diodes |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | Free-standing substrates |
| Keyword(3) | HVPE |
| Keyword(4) | NGO |
| 1st Author's Name | Masashi NAKAMURA |
| 1st Author's Affiliation | Toda Plant Nikko Materials co., LTD.() |
| 2nd Author's Name | Shinichi SASAKI |
| 2nd Author's Affiliation | Toda Plant Nikko Materials co., LTD. |
| 3rd Author's Name | Eiichi SIMIZU |
| 3rd Author's Affiliation | Toda Plant Nikko Materials co., LTD. |
| 4th Author's Name | Tadaaki ASAHI |
| 4th Author's Affiliation | Toda Plant Nikko Materials co., LTD. |
| 5th Author's Name | Kenji SATO |
| 5th Author's Affiliation | Toda Plant Nikko Materials co., LTD. |
| 6th Author's Name | Ryota TANAKA |
| 6th Author's Affiliation | Dept. of Electrical & Electronic Eng. Toyohashi University of Technology |
| 7th Author's Name | Hitoshi IMAI |
| 7th Author's Affiliation | Dept. of Electrical & Electronic Eng. Toyohashi University of Technology |
| 8th Author's Name | Akihiro WAKAHARA |
| 8th Author's Affiliation | Dept. of Electrical & Electronic Eng. Toyohashi University of Technology |
| 9th Author's Name | Akira YOSIDA |
| 9th Author's Affiliation | Dept. of Electrical & Electronic Eng. Toyohashi University of Technology |
| Date | 2002/6/6 |
| Paper # | LQE2002-20 |
| Volume (vol) | vol.102 |
| Number (no) | 117 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |