Presentation | 2002/6/6 Recent Progress of Crystal Growth Technology for GaN Substrate Akira USUI, Haruo SUNAKAWA, Atsushi A. YAMAGUCHI, Kenji KOBAYASHI, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | The production method of the GaN bulk substrate, which is required for the development of high output nitride laser and high luminous LED, can be roughly divided into the solution growth and the vapor phase epitaxy (VPE). In the solution growth, although the substrate crystal with low dislocation density is obtained, a subject is in the formation of large area, and the increase of productivity. In the VPE, a hundreds of μm thick GaN layer on substrate is mainly grown by the HVPE (hydride vapor phase epitaxy) method, and freestanding GaN wafer is obtained by the substrate separation. Although the VPE is carried out on moderate growth conditions as compared with the solution growth, large area separation and reduction of dislocation density are necessary. While describing the recent progress of these GaN bulk crystal technology, the feature and technical subject are summarized. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | GaN substrate / crystal growth / solution growth / vapor phase epitaxy / dislocation / freestanding substrate |
Paper # | LQE2002-19 |
Date of Issue |
Conference Information | |
Committee | LQE |
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Conference Date | 2002/6/6(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Lasers and Quantum Electronics (LQE) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Recent Progress of Crystal Growth Technology for GaN Substrate |
Sub Title (in English) | |
Keyword(1) | GaN substrate |
Keyword(2) | crystal growth |
Keyword(3) | solution growth |
Keyword(4) | vapor phase epitaxy |
Keyword(5) | dislocation |
Keyword(6) | freestanding substrate |
1st Author's Name | Akira USUI |
1st Author's Affiliation | Photonics and Wireless Devices Res. Labs. NEC Corp.() |
2nd Author's Name | Haruo SUNAKAWA |
2nd Author's Affiliation | Photonics and Wireless Devices Res. Labs. NEC Corp. |
3rd Author's Name | Atsushi A. YAMAGUCHI |
3rd Author's Affiliation | Photonics and Wireless Devices Res. Labs. NEC Corp. |
4th Author's Name | Kenji KOBAYASHI |
4th Author's Affiliation | Fundamental Res. Labs. NEC Corp. |
Date | 2002/6/6 |
Paper # | LQE2002-19 |
Volume (vol) | vol.102 |
Number (no) | 117 |
Page | pp.pp.- |
#Pages | 4 |
Date of Issue |