Presentation 2002/6/6
Recent Progress of Crystal Growth Technology for GaN Substrate
Akira USUI, Haruo SUNAKAWA, Atsushi A. YAMAGUCHI, Kenji KOBAYASHI,
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Abstract(in English) The production method of the GaN bulk substrate, which is required for the development of high output nitride laser and high luminous LED, can be roughly divided into the solution growth and the vapor phase epitaxy (VPE). In the solution growth, although the substrate crystal with low dislocation density is obtained, a subject is in the formation of large area, and the increase of productivity. In the VPE, a hundreds of μm thick GaN layer on substrate is mainly grown by the HVPE (hydride vapor phase epitaxy) method, and freestanding GaN wafer is obtained by the substrate separation. Although the VPE is carried out on moderate growth conditions as compared with the solution growth, large area separation and reduction of dislocation density are necessary. While describing the recent progress of these GaN bulk crystal technology, the feature and technical subject are summarized.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) GaN substrate / crystal growth / solution growth / vapor phase epitaxy / dislocation / freestanding substrate
Paper # LQE2002-19
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Committee LQE
Conference Date 2002/6/6(1days)
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Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Recent Progress of Crystal Growth Technology for GaN Substrate
Sub Title (in English)
Keyword(1) GaN substrate
Keyword(2) crystal growth
Keyword(3) solution growth
Keyword(4) vapor phase epitaxy
Keyword(5) dislocation
Keyword(6) freestanding substrate
1st Author's Name Akira USUI
1st Author's Affiliation Photonics and Wireless Devices Res. Labs. NEC Corp.()
2nd Author's Name Haruo SUNAKAWA
2nd Author's Affiliation Photonics and Wireless Devices Res. Labs. NEC Corp.
3rd Author's Name Atsushi A. YAMAGUCHI
3rd Author's Affiliation Photonics and Wireless Devices Res. Labs. NEC Corp.
4th Author's Name Kenji KOBAYASHI
4th Author's Affiliation Fundamental Res. Labs. NEC Corp.
Date 2002/6/6
Paper # LQE2002-19
Volume (vol) vol.102
Number (no) 117
Page pp.pp.-
#Pages 4
Date of Issue