Presentation | 2004/4/16 Facet degradation behavior of InGaAs/GaAs strained-layer quantum-well lasers Tatsuya TAKESHITA, Mitsuru SUGO, Yuichi TOHMORI, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Facet degradation mechanisms of a 980-nm InGaAs/GaAs strained-layer quantum-well laser are analyzed by monitoring the optical-beam induced current. Sudden failure during aging is due to catastrophic optical damage. It is clarified that the behavior of defects around the facets governs the long-term stability as well as catastrophic-optical damage generation during operation. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Semiconductor laser / Laser reliability / Aging / Facet degradation / Optical beam induced current / OBIC |
Paper # | R2004-6,CPM2004-6,OPE2004-6 |
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Committee | OPE |
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Conference Date | 2004/4/16(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Optoelectronics (OPE) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Facet degradation behavior of InGaAs/GaAs strained-layer quantum-well lasers |
Sub Title (in English) | |
Keyword(1) | Semiconductor laser |
Keyword(2) | Laser reliability |
Keyword(3) | Aging |
Keyword(4) | Facet degradation |
Keyword(5) | Optical beam induced current |
Keyword(6) | OBIC |
1st Author's Name | Tatsuya TAKESHITA |
1st Author's Affiliation | NTT Photonics Laboratories, NTT Corporation() |
2nd Author's Name | Mitsuru SUGO |
2nd Author's Affiliation | NTT Photonics Laboratories, NTT Corporation |
3rd Author's Name | Yuichi TOHMORI |
3rd Author's Affiliation | NTT Photonics Laboratories, NTT Corporation |
Date | 2004/4/16 |
Paper # | R2004-6,CPM2004-6,OPE2004-6 |
Volume (vol) | vol.104 |
Number (no) | 28 |
Page | pp.pp.- |
#Pages | 5 |
Date of Issue |