Presentation 2004/4/16
Facet degradation behavior of InGaAs/GaAs strained-layer quantum-well lasers
Tatsuya TAKESHITA, Mitsuru SUGO, Yuichi TOHMORI,
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Abstract(in English) Facet degradation mechanisms of a 980-nm InGaAs/GaAs strained-layer quantum-well laser are analyzed by monitoring the optical-beam induced current. Sudden failure during aging is due to catastrophic optical damage. It is clarified that the behavior of defects around the facets governs the long-term stability as well as catastrophic-optical damage generation during operation.
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Keyword(in English) Semiconductor laser / Laser reliability / Aging / Facet degradation / Optical beam induced current / OBIC
Paper # R2004-6,CPM2004-6,OPE2004-6
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Committee OPE
Conference Date 2004/4/16(1days)
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Registration To Optoelectronics (OPE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Facet degradation behavior of InGaAs/GaAs strained-layer quantum-well lasers
Sub Title (in English)
Keyword(1) Semiconductor laser
Keyword(2) Laser reliability
Keyword(3) Aging
Keyword(4) Facet degradation
Keyword(5) Optical beam induced current
Keyword(6) OBIC
1st Author's Name Tatsuya TAKESHITA
1st Author's Affiliation NTT Photonics Laboratories, NTT Corporation()
2nd Author's Name Mitsuru SUGO
2nd Author's Affiliation NTT Photonics Laboratories, NTT Corporation
3rd Author's Name Yuichi TOHMORI
3rd Author's Affiliation NTT Photonics Laboratories, NTT Corporation
Date 2004/4/16
Paper # R2004-6,CPM2004-6,OPE2004-6
Volume (vol) vol.104
Number (no) 28
Page pp.pp.-
#Pages 5
Date of Issue