| Presentation | 2004/6/25 K-factor of 1.3μm-range GaInNAsSb/GaAs VCSEL M. Ariga, M. Arai, C. Setiagung, Y. Ikenaga, T. Kageyama, K. Kumada, N. Iwai, T. Hama, H. Shimizu, K. Nishikata, A. Kasukawa, F. Koyama, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The K-factor of 1.3μm-range GaInNAsSb VCSELs is presented for the first time. The maximum modulation bandwidth was estimated to be 23GHz from a measured K-factor of 0.39 nsec. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | VCSEL / GaInNAsSb / high speed modulation / K-factor |
| Paper # | OPE2004-21 |
| Date of Issue |
| Conference Information | |
| Committee | OPE |
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| Conference Date | 2004/6/25(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Optoelectronics (OPE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | K-factor of 1.3μm-range GaInNAsSb/GaAs VCSEL |
| Sub Title (in English) | |
| Keyword(1) | VCSEL |
| Keyword(2) | GaInNAsSb |
| Keyword(3) | high speed modulation |
| Keyword(4) | K-factor |
| 1st Author's Name | M. Ariga |
| 1st Author's Affiliation | Semiconductor R&D Center, Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd.,() |
| 2nd Author's Name | M. Arai |
| 2nd Author's Affiliation | Microsystem Research Center, P&I Lab, Tokyo Institute of Technology |
| 3rd Author's Name | C. Setiagung |
| 3rd Author's Affiliation | Semiconductor R&D Center, Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd., |
| 4th Author's Name | Y. Ikenaga |
| 4th Author's Affiliation | Semiconductor R&D Center, Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd., |
| 5th Author's Name | T. Kageyama |
| 5th Author's Affiliation | Semiconductor R&D Center, Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd., |
| 6th Author's Name | K. Kumada |
| 6th Author's Affiliation | Semiconductor R&D Center, Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd., |
| 7th Author's Name | N. Iwai |
| 7th Author's Affiliation | Semiconductor R&D Center, Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd., |
| 8th Author's Name | T. Hama |
| 8th Author's Affiliation | Semiconductor R&D Center, Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd., |
| 9th Author's Name | H. Shimizu |
| 9th Author's Affiliation | Semiconductor R&D Center, Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd., |
| 10th Author's Name | K. Nishikata |
| 10th Author's Affiliation | Semiconductor R&D Center, Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd., |
| 11th Author's Name | A. Kasukawa |
| 11th Author's Affiliation | Semiconductor R&D Center, Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd., |
| 12th Author's Name | F. Koyama |
| 12th Author's Affiliation | Microsystem Research Center, P&I Lab, Tokyo Institute of Technology |
| Date | 2004/6/25 |
| Paper # | OPE2004-21 |
| Volume (vol) | vol.104 |
| Number (no) | 161 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |