Presentation 2003/12/13
[Invited Paper] Long wavelength VCSELs on InP
N. Nishiyama, C. Caneau, S. Tsuda, M. Hu, X. S. Liu, G. Guryanov, R. Bhat, C. E. Zah,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) Long wavelength vertical-cavity surface-emitting lasers (VCSELs) grown by MOCVD on InP substrates have been developed. Devices consist of an AlGaInAs/InP monolithic bottom DBR, AlGaInAs quantum wells and a buried tunnel junction. These devices show >1 mW single mode power for 1.55-μm-band VCSELs with the record value of slope efficiency of 58 %. Lasing operation was observed up to 90 ℃. Also, error free transmission has been demonstrated up to 12 Gbit/s back-to-back and 10 Gbit/s with SOA and 100 km negative dispersion fiber. 1.3 μm VCSELs with the same structure were also demonstrated successfully.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Long-wavelength / VCSEL / InP
Paper # OPE2003-228,LQE2003-165
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Committee OPE
Conference Date 2003/12/13(1days)
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Paper Information
Registration To Optoelectronics (OPE)
Language ENG
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) [Invited Paper] Long wavelength VCSELs on InP
Sub Title (in English)
Keyword(1) Long-wavelength
Keyword(2) VCSEL
Keyword(3) InP
1st Author's Name N. Nishiyama
1st Author's Affiliation Corning Incorporated()
2nd Author's Name C. Caneau
2nd Author's Affiliation Corning Incorporated
3rd Author's Name S. Tsuda
3rd Author's Affiliation Corning Incorporated
4th Author's Name M. Hu
4th Author's Affiliation Corning Incorporated
5th Author's Name X. S. Liu
5th Author's Affiliation Corning Incorporated
6th Author's Name G. Guryanov
6th Author's Affiliation Corning Incorporated
7th Author's Name R. Bhat
7th Author's Affiliation Corning Incorporated
8th Author's Name C. E. Zah
8th Author's Affiliation Corning Incorporated
Date 2003/12/13
Paper # OPE2003-228,LQE2003-165
Volume (vol) vol.103
Number (no) 525
Page pp.pp.-
#Pages 4
Date of Issue