Presentation 2003/12/12
[Invited]Yellow-green semicondcutor lasers fabricated by II-VI compounds on InP substrates
Katsumi KISHINO, Ichirou NOMURA,
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Abstract(in English) Novel II-VI compound materials such as MgZnCdSe, BeZnTe, and their related superlattices (SLs) grown on InP substrates were proposed for wide-range visible optical devices such as laser diodes (LDs) and light emitting diodes (LEDs).Visible LEDs consisting of ZnCdSe/BeZnTe SL active, MgSe/BeZnTe SL p-cladding, and MgSe/ZnCdSe SL n-cladding layers were fabricated to obtain wide-range visible electro luminescence (EL) emissions from 554 (yellow-green) to 644 nm (red). For yellow (575nm) LEDs, a long lifetime more than 3500 hours was demonstrated to show high reliability of the LEDs. LDs with ZnCdSe active layers were fabricated. Yellow-green lasing operations around 560 nm were successfully achieved under pulsed current injection at 77 K, for the first time.
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Keyword(in English) II-VI compound / InP substrate / visible / semiconductor laser / light emitting diode / yellow-green
Paper # OPE2003-203,LQE2003-140
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Committee OPE
Conference Date 2003/12/12(1days)
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Registration To Optoelectronics (OPE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) [Invited]Yellow-green semicondcutor lasers fabricated by II-VI compounds on InP substrates
Sub Title (in English)
Keyword(1) II-VI compound
Keyword(2) InP substrate
Keyword(3) visible
Keyword(4) semiconductor laser
Keyword(5) light emitting diode
Keyword(6) yellow-green
1st Author's Name Katsumi KISHINO
1st Author's Affiliation Faculty of Science and Technology, Sophia University()
2nd Author's Name Ichirou NOMURA
2nd Author's Affiliation Faculty of Science and Technology, Sophia University
Date 2003/12/12
Paper # OPE2003-203,LQE2003-140
Volume (vol) vol.103
Number (no) 524
Page pp.pp.-
#Pages 4
Date of Issue