Presentation | 2003/6/27 Analysis of Band Structure and Polarization Anisotropy of Strained Quantum-Wire Structure Takeo MARUYAMA, Anisul HAQUE, Shigehisa ARAI, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Energy-band structures of compressively-strained GaInAsP/InP quantum-wires fabricated by etching and regrowth method have been calculated using an 8 band k ・ p theory including strain relaxation. The effects of strain-compensating barriers and vertically stacking multiple wire layers on band structures are investigated. Experimentally observed wire-width dependence of the large energy blue-shift in vertically stacked multiple quantum-wire structures is accurately explained using our calculations without any fitting parameter. Polarization dependence of spontaneous emission spectrum of the strained quantum wires are studied theoretically considering the effects of strain and vertically stacking multiple wires. An anomalous dependence of polarization anisotropy on compressive strain in active regions, barrier tensile strain, wire width and the number of vertically stacked layers is explained in terms of band mixing due to strain relaxation. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Quantum-Wire Structure / GaInAsP-InP / Strain-Compensated Quantum-Well / Polarization Anisotro |
Paper # | OPE2003-32,LQE2003-26 |
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Conference Information | |
Committee | OPE |
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Conference Date | 2003/6/27(1days) |
Place (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Optoelectronics (OPE) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Analysis of Band Structure and Polarization Anisotropy of Strained Quantum-Wire Structure |
Sub Title (in English) | |
Keyword(1) | Quantum-Wire Structure |
Keyword(2) | GaInAsP-InP |
Keyword(3) | Strain-Compensated Quantum-Well |
Keyword(4) | Polarization Anisotro |
1st Author's Name | Takeo MARUYAMA |
1st Author's Affiliation | Research Center for Quantum Effect Electronics, Tokyo Institute of Technology:JST-CREST() |
2nd Author's Name | Anisul HAQUE |
2nd Author's Affiliation | Research Center for Quantum Effect Electronics, Tokyo Institute of Technology:JST-CREST |
3rd Author's Name | Shigehisa ARAI |
3rd Author's Affiliation | Research Center for Quantum Effect Electronics, Tokyo Institute of Technology:JST-CREST |
Date | 2003/6/27 |
Paper # | OPE2003-32,LQE2003-26 |
Volume (vol) | vol.103 |
Number (no) | 171 |
Page | pp.pp.- |
#Pages | 4 |
Date of Issue |