Presentation 2003/6/27
Analysis of Band Structure and Polarization Anisotropy of Strained Quantum-Wire Structure
Takeo MARUYAMA, Anisul HAQUE, Shigehisa ARAI,
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Abstract(in English) Energy-band structures of compressively-strained GaInAsP/InP quantum-wires fabricated by etching and regrowth method have been calculated using an 8 band k ・ p theory including strain relaxation. The effects of strain-compensating barriers and vertically stacking multiple wire layers on band structures are investigated. Experimentally observed wire-width dependence of the large energy blue-shift in vertically stacked multiple quantum-wire structures is accurately explained using our calculations without any fitting parameter. Polarization dependence of spontaneous emission spectrum of the strained quantum wires are studied theoretically considering the effects of strain and vertically stacking multiple wires. An anomalous dependence of polarization anisotropy on compressive strain in active regions, barrier tensile strain, wire width and the number of vertically stacked layers is explained in terms of band mixing due to strain relaxation.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Quantum-Wire Structure / GaInAsP-InP / Strain-Compensated Quantum-Well / Polarization Anisotro
Paper # OPE2003-32,LQE2003-26
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Committee OPE
Conference Date 2003/6/27(1days)
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Registration To Optoelectronics (OPE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Analysis of Band Structure and Polarization Anisotropy of Strained Quantum-Wire Structure
Sub Title (in English)
Keyword(1) Quantum-Wire Structure
Keyword(2) GaInAsP-InP
Keyword(3) Strain-Compensated Quantum-Well
Keyword(4) Polarization Anisotro
1st Author's Name Takeo MARUYAMA
1st Author's Affiliation Research Center for Quantum Effect Electronics, Tokyo Institute of Technology:JST-CREST()
2nd Author's Name Anisul HAQUE
2nd Author's Affiliation Research Center for Quantum Effect Electronics, Tokyo Institute of Technology:JST-CREST
3rd Author's Name Shigehisa ARAI
3rd Author's Affiliation Research Center for Quantum Effect Electronics, Tokyo Institute of Technology:JST-CREST
Date 2003/6/27
Paper # OPE2003-32,LQE2003-26
Volume (vol) vol.103
Number (no) 171
Page pp.pp.-
#Pages 4
Date of Issue