| Presentation | 2003/6/27 RT-CW Operation of GaInAsP/InP Strain-Compensated Multiple Quantum-Wire Lasers Fabricated by Dry-Etching and Regrowth Hideki YAGI, Takuya SANO, Kazuya OHIRA, Takeo MARUYAMA, Anisul HAQUE, Shigehisa ARAI, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | RT-CW operation of GaInAsP/InP quantum-wire lasers fabricated by electron beam lithography, CH_4/H_2-reactive ion etching and organometallic vapor-phase-epitaxial regrowth was realized for the first time. A threshold current density of 802 A/cm^2 and differential quantum efficiency of 36 % were obtained for a device with strain-compensated 5-stacked quantum-wires with the wire width of 23 nm in the period of 80 nm, the stripe width of 15 μm and the cavity length of 1.15 mm. From lifetime measurement under RT-CW condition, no noticeable degradation in light output was observed even after more than 4,300 hours. These results indicate moderate reliability of GaInAsP/InP quantum-wire lasers fabricated by dry etching and regrowth processes. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Quantum-Wire Laser / GaInAsP-InP / Strain-Compensated Quantum-Well / CH_4-H_2-RIE / OMVPE Regrowth |
| Paper # | OPE2003-31,LQE2003-25 |
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| Committee | OPE |
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| Conference Date | 2003/6/27(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Optoelectronics (OPE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | RT-CW Operation of GaInAsP/InP Strain-Compensated Multiple Quantum-Wire Lasers Fabricated by Dry-Etching and Regrowth |
| Sub Title (in English) | |
| Keyword(1) | Quantum-Wire Laser |
| Keyword(2) | GaInAsP-InP |
| Keyword(3) | Strain-Compensated Quantum-Well |
| Keyword(4) | CH_4-H_2-RIE |
| Keyword(5) | OMVPE Regrowth |
| 1st Author's Name | Hideki YAGI |
| 1st Author's Affiliation | Research Center for Quantum Effect Electronics, Tokyo Institute of Technology() |
| 2nd Author's Name | Takuya SANO |
| 2nd Author's Affiliation | Research Center for Quantum Effect Electronics, Tokyo Institute of Technology |
| 3rd Author's Name | Kazuya OHIRA |
| 3rd Author's Affiliation | Research Center for Quantum Effect Electronics, Tokyo Institute of Technology |
| 4th Author's Name | Takeo MARUYAMA |
| 4th Author's Affiliation | Research Center for Quantum Effect Electronics, Tokyo Institute of Technology:JST-CREST |
| 5th Author's Name | Anisul HAQUE |
| 5th Author's Affiliation | Research Center for Quantum Effect Electronics, Tokyo Institute of Technology:JST-CREST |
| 6th Author's Name | Shigehisa ARAI |
| 6th Author's Affiliation | Research Center for Quantum Effect Electronics, Tokyo Institute of Technology:JST-CREST |
| Date | 2003/6/27 |
| Paper # | OPE2003-31,LQE2003-25 |
| Volume (vol) | vol.103 |
| Number (no) | 171 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |