| Presentation | 2004/8/19 Fabrication of long-wavelength light emitting diodes with wide-emission bandwidth using GaAsNSe alloy semiconductor Katsuhiro UESUGI, Ikuo SUEMUNE, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Long-wavelength light emitting diodes for optical-fiber communications using GaAsNSe alloy semiconductor were studied. GaAsNSe/GaAs superlattices (SLs) were grown on GaAs(OO1) substrates by metalorganic molecular-beam epitaxy. Bright photoluminescence emission around 1.3-1.6 μm-wavelength regions was observed from these SLs, which suggests that the contribution of nonradiative recombinations in GaAsNSe layers was reduced by heavy Se doping. The photoluminescence efficiency was drastically improved by combining GaAsN/GaAsSb SLs with the GaAsNSe/GaAs SLs to reduce the strain accumulation in the layers. Electro luminescence around 1.3 μm with broad emission spectrum from diodes based on the GaAsNSe/GaAs SLs was observed at 80 K. These results indicate that the GaAsNSe-based diodes are a possible candidate for broad-band light sources which cover the whole optical-fiber communication bands |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | light emitting diode / optical-fiber communication / GaAs / III-V-N alloy / GaAsNSe / superlattice |
| Paper # | EMD2004-39,CPM2004-65,OPE2004-122,LQE2004-37 |
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| Conference Information | |
| Committee | EMD |
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| Conference Date | 2004/8/19(1days) |
| Place (in Japanese) | (See Japanese page) |
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| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Electromechanical Devices (EMD) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Fabrication of long-wavelength light emitting diodes with wide-emission bandwidth using GaAsNSe alloy semiconductor |
| Sub Title (in English) | |
| Keyword(1) | light emitting diode |
| Keyword(2) | optical-fiber communication |
| Keyword(3) | GaAs |
| Keyword(4) | III-V-N alloy |
| Keyword(5) | GaAsNSe |
| Keyword(6) | superlattice |
| 1st Author's Name | Katsuhiro UESUGI |
| 1st Author's Affiliation | Research Institute for Electronic Science, Hokkaido University() |
| 2nd Author's Name | Ikuo SUEMUNE |
| 2nd Author's Affiliation | Research Institute for Electronic Science, Hokkaido University |
| Date | 2004/8/19 |
| Paper # | EMD2004-39,CPM2004-65,OPE2004-122,LQE2004-37 |
| Volume (vol) | vol.104 |
| Number (no) | 263 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |